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1. Effect of annealing atmosphere p O 2 on leakage current in 80(Bi 0.5 Na 0.5 )TiO 3 -20(Bi 0.5 K 0.5 )TiO 3 piezoelectric thin films

   https://doi.org/10.1063/1.4981771  

   Walenza-Slabe, J. ; Gibbons, B. J. ( April 2017 , Applied Physics Letters)
2. BiFeO 3 -doped (K 0.5 ,Na 0.5 )(Mn 0.005 ,Nb 0.995 )O 3 ferroelectric thin film capacitors for high energy density storage applications

   https://doi.org/10.1063/1.4980113  

   Won, Sung Sik ; Kawahara, Masami ; Kuhn, Lindsay ; Venugopal, Vineeth ; Kwak, Jiyeon ; Kim, Ill Won ; Kingon, Angus I. ; Kim, Seung-Hyun ( April 2017 , Applied Physics Letters)
3. Comparison of K 0.5 Na 0.5 NbO 3 and PbZr 0.52 Ti 0.48 O 3 compliant-mechanism-design energy harvesters

   https://doi.org/10.1063/5.0037731  

   Kovacova, Veronika ; Yang, Jung In ; Jacques, Leonard ; Yeo, Hong Goo ; Lanari, Valentin ; Rahn, Christopher ; Trolier-McKinstry, Susan ( March 2021 , Journal of Applied Physics)
4. Domain Dynamics and Local Level Switching Behaviors of Sol–Gel Nanopowder-Derived Lead-Free Piezoelectric Bi 0.5 (Na 0.78 K 0.22 ) 0.5 TiO 3 Ceramics

   https://doi.org/10.1021/acsaelm.1c01121  

   Won, Sung Sik ; Lee, Jinkee ; Shim, In-Bo ; Kingon, Angus I. ; Kim, Seung-Hyun ( December 2021 , ACS Applied Electronic Materials)
5. High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3

   https://doi.org/10.1039/D1TC00202C  

   Yun, Chao ; Webb, Matthew ; Li, Weiwei ; Wu, Rui ; Xiao, Ming ; Hellenbrand, Markus ; Kursumovic, Ahmed ; Dou, Hongyi ; Gao, Xingyao ; Dhole, Samyak ; et al ( April 2021 , Journal of Materials Chemistry C)

   null (Ed.)

   Here, in ionically conducting Na 0.5 Bi 0.5 TiO 3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that the combination of oxygen ionic vacancies and low-level electronic conduction is important for controlling Schottky barrier interfacial switching. We achieve a large ON/OFF ratio for high resistance/low resistance ( R HRS / R LRS ), enabled by an almost constant R HRS of ∼10 9 Ω, and composition-tunable R LRS value modulated by growth temperature. R HRS / R LRS ratios of up to 10 4 and pronounced resistive switching at low voltages (SET voltage of <1.2 V without high-voltage electroforming), strong endurance (no change in resistance states after several 10 3 cycles), uniformity, stable switching and fast switching speed are achieved. Of particular interest is that the best performance is achieved at the lowest growth temperature studied (600 °C), which is opposite to the case of most other perovskite oxides for memristors, where higher growth temperatures are required for optimum performance. This is understood based on the oxygen vacancy control of interfacial switching in NBT, whereas a range of other mechanisms (including filamentary switching) occur in other perovskites. The study of NBT has enabled us to determine key parameters for achieving high performance memristors. 

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