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Abstract Electric‐field‐controlled magnetism is of importance in realizing energy efficient, dense and fast information storage and processing. Strain‐mediated converse magneto‐electric (ME) coupling between ferromagnetic and ferroelectric heterostructure shows promise for realizing electric‐controlled magnetism at room temperature and is attracting a number of recent investigations. However, such ME‐effect studies have mainly focus on magnetic metals. In this work, high quality yttrium iron garnet (Y3Fe5O12(YIG)) films are deposited directly onto (100)‐oriented single‐crystal Pb (Mg1/3Nb2/3)0.7Ti0.3O3(PMN‐PT) substrates by means of magnetron sputtering. The electric‐field‐induced polarization switching and lattice strain in the PMN‐PT substrate results in two distinct magnetization states in the YIG film that are nonvolatile and electrically reversible. Because of the direct contact between the YIG and the PMN‐PT substrate, an efficient ME coupling and an almost 90° rotation of the easy axis of the YIG film can be realized. Furthermore, the electric‐field‐controlled hysteresis loop‐like ferromagnetic resonance field shifts and spin pumping signals are observed in Pt/YIG/PMN‐PT heterostructures. Thus, the obstacle is overcome via growing high‐quality YIG thin films directly onto PMN‐PT substrates and an efficient manipulation of magnetism and pure spin current transport by electric field is thereby realized. These findings are instructive for future low‐power magnetic insulator‐based spintronic devices.
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Low‐Voltage Magnetoelectric Coupling in Fe 0.5 Rh 0.5 /0.68PbMg 1/3 Nb 2/3 O 3 ‐0.32PbTiO 3 Thin‐Film Heterostructures
Abstract The rapid development of computing applications demands novel low‐energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low‐voltage control of magnetism in 30 nm Fe0.5Rh0.5/100 nm 0.68PbMg1/3Nb2/3O3‐0.32PbTiO3(PMN‐PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain‐induced changes in the Fe0.5Rh0.5mediated by voltages applied to the PMN‐PT. We describe approaches to achieve high‐quality, epitaxial growth of Fe0.5Rh0.5on the PMN‐PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin‐film devices via studies of the anomalous Hall effect. By comparing the spin‐flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10−8 s m−1at 325 K while applying a −0.75 V bias.
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- Award ID(s):
- 1708615
- PAR ID:
- 10446852
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Functional Materials
- Volume:
- 31
- Issue:
- 40
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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