More Like this

1. High performance, electroforming-free, thin film memristors using ionic Na _0.5 Bi _0.5 TiO ₃

   https://doi.org/10.1039/D1TC00202C  

   Yun, Chao; Webb, Matthew; Li, Weiwei; Wu, Rui; Xiao, Ming; Hellenbrand, Markus; Kursumovic, Ahmed; Dou, Hongyi; Gao, Xingyao; Dhole, Samyak; et al (April 2021, Journal of Materials Chemistry C)

   null (Ed.)

   Here, in ionically conducting Na 0.5 Bi 0.5 TiO 3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that the combination of oxygen ionic vacancies and low-level electronic conduction is important for controlling Schottky barrier interfacial switching. We achieve a large ON/OFF ratio for high resistance/low resistance ( R HRS / R LRS ), enabled by an almost constant R HRS of ∼10 9 Ω, and composition-tunable R LRS value modulated by growth temperature. R HRS / R LRS ratios of up to 10 4 and pronounced resistive switching at low voltages (SET voltage of <1.2 V without high-voltage electroforming), strong endurance (no change in resistance states after several 10 3 cycles), uniformity, stable switching and fast switching speed are achieved. Of particular interest is that the best performance is achieved at the lowest growth temperature studied (600 °C), which is opposite to the case of most other perovskite oxides for memristors, where higher growth temperatures are required for optimum performance. This is understood based on the oxygen vacancy control of interfacial switching in NBT, whereas a range of other mechanisms (including filamentary switching) occur in other perovskites. The study of NBT has enabled us to determine key parameters for achieving high performance memristors. 

   more » « less
2. Comparison of K _0.5 Na _0.5 NbO ₃ and PbZr _0.52 Ti _0.48 O ₃ compliant-mechanism-design energy harvesters

   https://doi.org/10.1063/5.0037731  

   Kovacova, Veronika; Yang, Jung In; Jacques, Leonard; Yeo, Hong Goo; Lanari, Valentin; Rahn, Christopher; Trolier-McKinstry, Susan (March 2021, Journal of Applied Physics)
3. Domain Dynamics and Local Level Switching Behaviors of Sol–Gel Nanopowder-Derived Lead-Free Piezoelectric Bi _0.5 (Na _0.78 K _0.22 ) _0.5 TiO ₃ Ceramics

   https://doi.org/10.1021/acsaelm.1c01121  

   Won, Sung Sik; Lee, Jinkee; Shim, In-Bo; Kingon, Angus I.; Kim, Seung-Hyun (December 2021, ACS Applied Electronic Materials)
4. Low‐Voltage Magnetoelectric Coupling in Fe _0.5 Rh _0.5 /0.68PbMg _1/3 Nb _2/3 O ₃ ‐0.32PbTiO ₃ Thin‐Film Heterostructures

   https://doi.org/10.1002/adfm.202105068  

   Zhao, Wenbo; Kim, Jieun; Huang, Xiaoxi; Zhang, Lei; Pesquera, David; Velarde, Gabriel_A_P; Gosavi, Tanay; Lin, Chia‐Ching; Nikonov, Dmitri_E; Li, Hai; et al (July 2021, Advanced Functional Materials)

   Abstract The rapid development of computing applications demands novel low‐energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low‐voltage control of magnetism in 30 nm Fe_0.5Rh_0.5/100 nm 0.68PbMg_1/3Nb_2/3O₃‐0.32PbTiO₃(PMN‐PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain‐induced changes in the Fe_0.5Rh_0.5mediated by voltages applied to the PMN‐PT. We describe approaches to achieve high‐quality, epitaxial growth of Fe_0.5Rh_0.5on the PMN‐PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin‐film devices via studies of the anomalous Hall effect. By comparing the spin‐flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10⁻⁸ s m⁻¹at 325 K while applying a −0.75 V bias. 

   more » « less
5. Refine Intervention: Characterizing Disordered Yb _0.5 Co ₃ Ge ₃

   https://doi.org/10.1021/acs.cgd.0c00865  

   Weiland, Ashley; Eddy, Lucas J.; McCandless, Gregory T.; Hodovanets, Halyna; Paglione, Johnpierre; Chan, Julia Y (October 2020, Crystal Growth & Design)

   null (Ed.)