He, Wangxin, Shim, Wonbo, Yin, Shihui, Sun, Xiaoyu, Fan, Deliang, Yu, Shimeng, and Seo, Jae-sun. Characterization and Mitigation of Relaxation Effects on Multi-level RRAM based In-Memory Computing. Retrieved from https://par.nsf.gov/biblio/10312266. 2021 IEEE International Reliability Physics Symposium (IRPS) . Web. doi:10.1109/IRPS46558.2021.9405228.

He, Wangxin, Shim, Wonbo, Yin, Shihui, Sun, Xiaoyu, Fan, Deliang, Yu, Shimeng, & Seo, Jae-sun. Characterization and Mitigation of Relaxation Effects on Multi-level RRAM based In-Memory Computing. 2021 IEEE International Reliability Physics Symposium (IRPS), (). Retrieved from https://par.nsf.gov/biblio/10312266. https://doi.org/10.1109/IRPS46558.2021.9405228

He, Wangxin, Shim, Wonbo, Yin, Shihui, Sun, Xiaoyu, Fan, Deliang, Yu, Shimeng, and Seo, Jae-sun. "Characterization and Mitigation of Relaxation Effects on Multi-level RRAM based In-Memory Computing". 2021 IEEE International Reliability Physics Symposium (IRPS) (). Country unknown/Code not available. https://doi.org/10.1109/IRPS46558.2021.9405228. https://par.nsf.gov/biblio/10312266.

@article{osti_10312266,
place = {Country unknown/Code not available}, title = {Characterization and Mitigation of Relaxation Effects on Multi-level RRAM based In-Memory Computing}, url = {https://par.nsf.gov/biblio/10312266}, DOI = {10.1109/IRPS46558.2021.9405228}, abstractNote = {}, journal = {2021 IEEE International Reliability Physics Symposium (IRPS)}, author = {He, Wangxin and Shim, Wonbo and Yin, Shihui and Sun, Xiaoyu and Fan, Deliang and Yu, Shimeng and Seo, Jae-sun}, }