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Title: 10 kV, 39 mΩ·cm 2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes
Award ID(s):
2036740
NSF-PAR ID:
10312823
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
IEEE Electron Device Letters
Volume:
42
Issue:
6
ISSN:
0741-3106
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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