An official website of the United States government
It has recently been demonstrated that electron beam injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length with injection duration, followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) at meta-stable native defect levels in the material, which in turn blocks recombination through these levels. In this work, in contrast to previous studies, the effect of electron injection in p-type Ga2O3 was investigated using cathodoluminescence technique in situ in scanning electron microscope, thus providing insight into minority carrier lifetime behavior under electron beam irradiation. The activation energy of ∼0.3 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.
more »
« less
Radiation-resistant binary solid solutions via vacancy trapping on solute clusters
Additions of solute that trap vacancies slow down vacancy diffusion and promote point-defect recombination in alloys subjected to irradiation. Such selective alloying can thus help to minimize the detrimental consequences resulting from point defect fluxes. The current work investigates the effect of solute additions on the recombi- nation rate using kinetic Monte Carlo simulations for a model alloy system, which was parametrized to Cu-Ag in the dilute limit, but with an increased solubility limit, ≈0.86 at.% at 300 K. As the solute concentration was increased above 0.1 at.%, solute clustering was observed and led to a strong increase in recombination rate. The beneficial effects of solute clustering on reducing vacancy mobility, and reducing solute drag, were analyzed by calculating relevant transport coefficients using the KineCluE code (Schuler et al., Computational Materials Science (2020) 172,109,191). Moreover, it was observed in the KMC simulations that large recombination rates resulted in a shift of steady-state distributions of solute cluster sizes to smaller clusters compared to equilibrium distributions in the solid solution. This shift is rationalized as resulting from the irreversible character of the interstitial-vacancy recombination reaction. These results suggest a novel irradiation effect on phase stability where a high recombination rate increases the solubility limit of a solute at steady state over its equilibrium value.
more »
« less
- Award ID(s):
- 1709857
- PAR ID:
- 10312915
- Date Published:
- Journal Name:
- Materialia
- Volume:
- 20
- ISSN:
- 2589-1529
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract Monolayer molybdenum disulfide has been previously discovered to exhibit non-volatile resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin sub-nanometer active layer thickness. However, the reliability of these nascent 2D-based memory devices was not previously investigated for practical applications. Here, we employ an electron irradiation treatment on monolayer MoS2film to modify the defect properties. Raman, photoluminescence, and X-ray photoelectron spectroscopy measurements have been performed to confirm the increasing amount of sulfur vacancies introduced by the e-beam irradiation process. The statistical electrical studies reveal the reliability can be improved by up to 1.5× for yield and 11× for average DC cycling endurance in the devices with a moderate radiation dose compared to unirradiated devices. Based on our previously proposed virtual conductive-point model with the metal ion substitution into sulfur vacancy, Monte Carlo simulations have been performed to illustrate the irradiation effect on device reliability, elucidating a clustering failure mechanism. This work provides an approach by electron irradiation to enhance the reliability of 2D memory devices and inspires further research in defect engineering to precisely control the switching properties for a wide range of applications from memory computing to radio-frequency switches.more » « less
-
Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope. The results demonstrate that charge injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) on metastable native defect levels in the material, which in turn blocks recombination through these levels. While previous studies of the same material were focused on probing a non-equilibrium carrier recombination by purely optical means (cathodoluminescence), in this work, the impact of charge injection on minority carrier diffusion was investigated. The activation energy of ∼0.072 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.more » « less
-
Replica exchange transition interface sampling simulations in Mg–Al alloys with high vacancy concentrations indicate that the presence of a solute reduces thermodynamic barriers to the clustering of vacancies and the formation of voids. The emergence of local minima in the free energy along the reaction coordinate suggests that void formation may become a multi-step process in the presence of a solute. In this scenario, vacancies agglomerate with solute before they coalesce into a stable void with well-defined internal surfaces. The emergence of vacancy–solute clusters as intermediate states would imply that classical nucleation theory is unlikely to adequately describe void formation in alloys at high vacancy concentrations, a likely precursor for alloy strengthening through nanoscale precipitation.more » « less
-
Annihilation of vacancy clusters in monolayer molybdenum diselenide (MoSe2) under electron beam irradiation is reported. In situ high-resolution transmission electron microscopy observation reveals that the annihilation is achieved by diffusion of vacancies to the free edge near the vacancy clusters. Monte Carlo simulations confirm that it is energetically favorable for the vacancies to locate at the free edge. By computing the minimum energy path for the annihilation of one vacancy cluster as a case study, it is further shown that electron beam irradiation and pre-stress in the suspended MoSe2 monolayer are necessary for the vacancies to overcome the energy barriers for diffusion. The findings suggest a new mechanism of vacancy healing in 2D materials and broaden the capability of electron beam for defect engineering of 2D materials, a promising way of tuning their properties for engineering applications.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1016/j.mtla.2021.101261
