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Title: A TCAD Simulation Study of Three-Independent-Gate Field-Effect Transistors at the 10-nm Node
Award ID(s):
1751064
PAR ID:
10313571
Author(s) / Creator(s):
;
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
Volume:
68
Issue:
8
ISSN:
0018-9383
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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