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1. (α _D , α _G )-GANs: Addressing GAN Training Instabilities via Dual Objectives

   https://doi.org/10.1109/ISIT54713.2023.10206844  

   Welfert, Monica; Otstot, Kyle; Kurri, Gowtham R; Sankar, Lalitha (June 2023, IEEE)
2. H trapping at the metastable cation vacancy in α -Ga ₂ O ₃ and α -Al ₂ O ₃

   https://doi.org/10.1063/5.0094707  

   Venzie, Andrew; Portoff, Amanda; Stavola, Michael; Fowler, W. Beall; Kim, Jihyun; Jeon, Dae-Woo; Park, Ji-Hyeon; Pearton, Stephen J. (May 2022, Applied Physics Letters)

   α-Ga₂O₃has the corundum structure analogous to that of α-Al₂O₃. The bandgap energy of α-Ga₂O₃is 5.3 eV and is greater than that of β-Ga₂O₃, making the α-phase attractive for devices that benefit from its wider bandgap. The O–H and O–D centers produced by the implantation of H⁺and D⁺into α-Ga₂O₃have been studied by infrared spectroscopy and complementary theory. An O–H line at 3269 cm⁻¹is assigned to H complexed with a Ga vacancy (V_Ga), similar to the case of H trapped by an Al vacancy (V_Al) in α-Al₂O₃. The isolated V_Gaand V_Aldefects in α-Ga₂O₃and α-Al₂O₃are found by theory to have a “shifted” vacancy-interstitial-vacancy equilibrium configuration, similar to V_Gain β-Ga₂O₃, which also has shifted structures. However, the addition of H causes the complex with H trapped at an unshifted vacancy to have the lowest energy in both α-Ga₂O₃and α-Al₂O₃. 

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3. Computational Investigations of the Water Structure at the α-Al ₂ O ₃ (0001)–Water Interface

   https://doi.org/10.1021/acs.jpcc.3c03243  

   Zhang, Xiaoliu; Arges, Christopher G.; Kumar, Revati (July 2023, The Journal of Physical Chemistry C)
4. Encapsulation of the vanadium substituted Keggin polyoxometalates [α-PVW ₁₁ O ₄₀ ] ⁴⁻ and [α-PV ₂ W ₁₀ O ₄₀ ] ⁵⁻ in HKUST-1

   https://doi.org/10.1039/d4dt01705f  

   Orozco, José C; Shuaib, Damola T; Swenson, LaSalle; Chen, Ying-Pin; Chen, Yu-Sheng; Khan, M Ishaque (October 2024, Dalton Transactions)

   Solid state UV-vis reflectance spectra reveal the distinct electronic structure of POM@MOF materials obtained by synthetic encapsulation of mono- and di-vanadium substituted Keggin polyoxotungstates in HKUST-1. 

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5. Growth of α-Ga ₂ O ₃ on α-Al ₂ O ₃ by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

   https://doi.org/10.35848/1347-4065/acbe04  

   McCandless, J. P.; Rowe, D.; Pieczulewski, N.; Protasenko, V.; Alonso-Orts, M.; Williams, M. S.; Eickhoff, M.; Xing, H. G.; Muller, D. A.; Jena, D.; et al (March 2023, Japanese Journal of Applied Physics)

   Abstract We report the growth of α -Ga 2 O 3 on m -plane α -Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α -Ga 2 O 3 ( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of α -Ga 2 O 3 . Through the use of In-mediated catalysis, growth rates over 0.2 μ m h −1 and rocking curves with full width at half maxima of Δ ω ≈ 0.45° are achieved. Faceting is observed along the α -Ga 2 O 3 film surface and explored through scanning transmission electron microscopy. 

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