Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs
- Award ID(s):
- 1939050
- NSF-PAR ID:
- 10318957
- Date Published:
- Journal Name:
- IEEE Transactions on Electron Devices
- Volume:
- 68
- Issue:
- 5
- ISSN:
- 0018-9383
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
No document suggestions found