skip to main content


Title: Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs
Award ID(s):
1939050
NSF-PAR ID:
10318957
Author(s) / Creator(s):
;
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
Volume:
68
Issue:
5
ISSN:
0018-9383
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
No document suggestions found