Lateral multiheterostructures with spatially modulated bandgaps have great potential for applications in high-performance electronic, optoelectronic and thermoelectric devices. Multiheterostructures based on transition metal tellurides are especially promising due to their tunable bandgap in a wide range and the rich variety of structural phases. However, the synthesis of telluride-based multiheterostructures remains a challenge due to the low activity of tellurium and the poor thermal stability of tellurium alloys. In this work, we synthesized monolayer WSe 2−2 x Te 2 x /WSe 2−2 y Te 2 y ( x > y ) multiheterostructures in situ using chemical vapor deposition (CVD). Photoluminescence analysis and Raman mapping confirm the spatial modulation of the bandgap in the radial direction. Furthermore, field-effect transistors with the channels parallel (type I) and perpendicular (type II) to the multiheterostructure rings were fabricated. Type I transistors exhibit enhanced ambipolar transport, due to the low energy bridges between the source and drain. Remarkably, the photocurrents in type I transistors are two orders of magnitude higher than those in type II transistors, which can be attributed to the fact that the photovoltaic photocurrents generated at the two heterojunctions are summed together in type I transistors, but they cancel each other in type II transistors. These multiheterostructures will provide a new platform for novel electronic/photonic devices with potential applications in broadband light sensing, highly sensitive imaging and ultrafast optoelectronic integrated circuits.
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(Invited) Silicon Nanosheets as Candidates for Silicon-Based Optoelectronics
The growth in computational ability over the past decades has positively impacted global development, the economy, healthcare, and science. As on-chip components are approaching the atomic scale, alternative paradigms are needed to address the thermal and electronic issues that impose bottlenecks for computing. One approach to address this is with optoelectronics. However, silicon—the backbone of microelectronics—is a poor choice due to its indirect bandgap, while existing optoelectronic materials are incompatible with CMOS infrastructure. Monolayer silicon nanosheets (SiNSs) are an intriguing material that exhibit photoluminescence, and are compositionally-compatible with the CMOS process. Here, we synthesize and characterize monolayer SiNSs, and show spectroscopic evidence that they exhibit a quasi-direct bandgap, which is corroborated by DFT calculations. We probe their thermal stability, demonstrating their structure and photoluminescence are stable beyond the required operating temperatures for computing applications. These optoelectronic properties, CMOS-compatibility, and stability make SiNSs a viable candidate for silicon-based photonics.
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- Award ID(s):
- 1847370
- NSF-PAR ID:
- 10321768
- Date Published:
- Journal Name:
- ECS Transactions
- Volume:
- 102
- Issue:
- 1
- ISSN:
- 1938-5862
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Even though transition metal dichalcogenides (TMDCs) are deemed to be novel photonic and optoelectronic 2D materials, the visible band gap being often limited to monolayer, hampers their potential in niche applications due to fabrication challenges. Uncontrollable defects and degraded functionalities at elevated temperature and under extreme environments further restrict their prospects. To address such limitations, the discovery of a new 2D material, α‐PbO is reported. Micromechanical as well as sonochemical exfoliation of 2D atomic sheets of α‐PbO are demonstrated and its optical behavior is investigated. Spectroscopic investigations indicate layer dependent band gaps. In particular, even multilayered PbO sheets exhibit visible band gap > 2 eV (direct) which is rare among semiconducting 2D materials. The emission lifetime of multilayer PbO atomic sheets is 7 ns (dim light) as compared to the monolayer which gives 2.5 ns lifetime and an intense light. Density functional theory calculations of layer dependent band structure of α‐PbO matches well with experimental results. Experimental findings suggest that PbO atomic sheets exhibit hydrophobic nature, thermal robustness, microwave stability, anti‐corrosive behaviour and acid resistance. This new low‐cost, abundant and robust 2D material is expected to find many applications in the fields of electronics, optoelectronics, sensors, photocatalysis and energy storage.
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Abstract Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic–photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo‐optic or electro‐optic modulation effects, resulting in large footprints and high energy consumption. As a promising alternative, chalcogenide phase‐change materials (PCMs) exhibit strong optical modulation in a static, self‐holding fashion, but the scalability of present PCM‐integrated photonic applications is still limited by the poor optical or electrical actuation approaches. Here, with phase transitions actuated by in situ silicon PIN diode heaters, scalable nonvolatile electrically reconfigurable photonic switches using PCM‐clad silicon waveguides and microring resonators are demonstrated. As a result, intrinsically compact and energy‐efficient switching units operated with low driving voltages, near‐zero additional loss, and reversible switching with high endurance are obtained in a complementary metal‐oxide‐semiconductor (CMOS)‐compatible process. This work can potentially enable very large‐scale CMOS‐integrated programmable electronic–photonic systems such as optical neural networks and general‐purpose integrated photonic processors.
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null (Ed.)Lead-free perovskites and their analogues have been extensively studied as a class of next-generation luminescent and optoelectronic materials. Herein, we report the synthesis of new colloidal Cs 4 M( ii )Bi 2 Cl 12 (M( ii ) = Cd, Mn) nanocrystals (NCs) with unique luminescence properties. The obtained Cs 4 M( ii )Bi 2 Cl 12 NCs show a layered double perovskite (LDP) crystal structure with good particle stability. Density functional theory calculations show that both samples exhibit a wide, direct bandgap feature. Remarkably, the strong Mn–Mn coupling effect of the Cs 4 M( ii )Bi 2 Cl 12 NCs results in an ultra-short Mn photoluminescence (PL) decay lifetime of around 10 μs, around two orders of magnitude faster than commonly observed Mn 2+ dopant emission in NCs. Diluting the Mn 2+ ion concentration through forming Cs 4 (Cd 1−x Mn x )Bi 2 Cl 12 (0 < x < 1) alloyed LDP NCs leads to prolonged PL lifetimes and enhanced PL quantum yields. Our study provides the first synthetic example of Bi-based LDP colloidal NCs with potential for serving as a new category of stable lead-free perovskite-type materials for various applications.more » « less
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Abstract Chalcogenide perovskites have emerged as promising semiconductor materials due to their appealing properties, including tunable bandgaps, high absorption coefficients, reasonable carrier lifetimes and mobilities, excellent chemical stability, and environmentally benign nature. However, beyond the well‐studied BaZrS3, reports on chalcogenide perovskite thin films with diverse compositions are scarce. In this study, the realization of four different types of chalcogenide perovskite thin films with controlled phases, through CS2annealing of amorphous chalcogenide precursor films deposited by pulsed laser deposition (PLD), is reported. This achievement is guided by a thorough theoretical investigation of the phase stability of chalcogenide perovskites. Upon crystallization in the distorted perovskite phase, all materials exhibit photoluminescence (PL) with peak positions in the visible range, consistent with their expected bandgap values. However, the full‐width‐at‐half‐maximum (FWHM) of the PL spectra varies significantly across these materials, ranging from 99 meV for SrHfS3to 231 meV for BaHfS3. The difference is attributed to the difference in kinetic barriers between local structural motifs for the Sr and Ba compounds. The findings underscore the promise of chalcogenide perovskite thin films as an alternative to traditional halide perovskites for optoelectronic applications, while highlighting the challenges in optimizing their synthesis and performance.
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1149/10201.0003ecst
