Nunn, William, Truttmann, Tristan K., and Jalan, Bharat. A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors. Retrieved from https://par.nsf.gov/biblio/10323958. Journal of Materials Research 36.23 Web. doi:10.1557/s43578-021-00377-1.
Nunn, William, Truttmann, Tristan K., & Jalan, Bharat. A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors. Journal of Materials Research, 36 (23). Retrieved from https://par.nsf.gov/biblio/10323958. https://doi.org/10.1557/s43578-021-00377-1
@article{osti_10323958,
place = {Country unknown/Code not available},
title = {A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors},
url = {https://par.nsf.gov/biblio/10323958},
DOI = {10.1557/s43578-021-00377-1},
abstractNote = {},
journal = {Journal of Materials Research},
volume = {36},
number = {23},
author = {Nunn, William and Truttmann, Tristan K. and Jalan, Bharat},
}
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