skip to main content


Title: TaCo 2 Te 2 : An Air‐Stable, High Mobility Van der Waals Material with Probable Magnetic Order
Abstract

Van der Waals (vdW) materials are an indispensable part of functional device technology due to their versatile physical properties and ease of exfoliating to the low‐dimensional limit. Among all the compounds investigated so far, the search for magnetic vdW materials has intensified in recent years, fueled by the realization of magnetism in 2D. However, metallic magnetic vdW systems are still uncommon. In addition, they rarely host high‐mobility charge carriers, which is an essential requirement for high‐speed electronic applications. Another shortcoming of 2D magnets is that they are highly air sensitive. Using chemical reasoning, TaCo2Te2is introduced as an air‐stable, high‐mobility, magnetic vdW material. It has a layered structure, which consists of Peierls distorted Co chains and a large vdW gap between the layers. It is found that the bulk crystals can be easily exfoliated and the obtained thin flakes are robust to ambient conditions after 4 months of monitoring using an optical microscope. Signatures of canted antiferromagntic behavior are also observed at low‐temperature. TaCo2Te2shows a metallic character and a large, nonsaturating, anisotropic magnetoresistance. Furthermore, the Hall data and quantum oscillation measurements reveal the presence of both electron‐ and hole‐type carriers and their high mobility.

 
more » « less
Award ID(s):
2011750
NSF-PAR ID:
10362815
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Functional Materials
Volume:
32
Issue:
8
ISSN:
1616-301X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Advancements in low‐dimensional functional device technology heavily rely on the discovery of suitable materials which have interesting physical properties as well as can be exfoliated down to the 2D limit. Exfoliable high‐mobility magnets are one such class of materials that, not due to lack of effort, has been limited to only a handful of options. So far, most of the attention has been focused on the van der Waals (vdW) systems. However, even within the non‐vdW, layered materials, it is possible to find all these desirable features. Using chemical reasoning, it is found that NdSb2is an ideal example. Even with a relatively small interlayer distance, this material can be exfoliated down to few layers. NdSb2has an antiferromagnetic ground state with a quasi 2D spin arrangement. The bulk crystals show a very large, non‐saturating magnetoresistance along with highly anisotropic electronic transport properties. It is confirmed that this anisotropy originates from the 2D Fermi pockets which also imply a rather quasi 2D confinement of the charge carrier density. Both electron and hole‐type carriers show very high mobilities. The possible non‐collinear spin arrangement also results in an anomalous Hall effect.

     
    more » « less
  2. Abstract

    Being able to electrically manipulate the magnetic properties in recently discovered van der Waals ferromagnets is essential for their integration in future spintronics devices. Here, the magnetization of a semiconducting 2D ferromagnet, i.e., Cr2Ge2Te6, is studied using the anomalous Hall effect in Cr2Ge2Te6/tantalum heterostructures. The thinner the flakes, hysteresis and remanence in the magnetization loop with out‐of‐plane magnetic fields become more prominent. In order to manipulate the magnetization in such thin flakes, a combination of an in‐plane magnetic field and a charge current flowing through Ta—a heavy metal exhibiting giant spin Hall effect—is used. In the presence of in‐plane fields of 20 mT, charge current densities as low as 5 × 105A cm–2are sufficient to switch the out‐of‐plane magnetization of Cr2Ge2Te6. This finding highlights that current densities required for spin‐orbit torque switching of Cr2Ge2Te6are about two orders of magnitude lower than those required for switching nonlayered metallic ferromagnets such as CoFeB. The results presented here show the potential of 2D ferromagnets for low‐power memory and logic applications.

     
    more » « less
  3. All van der Waals Fe 3 GeTe 2 /Cr 2 Ge 2 Te 6 /graphite magnetic heterojunctions have been fabricated via mechanical exfoliation and stacking, and their magnetotransport properties are studied in detail. At low bias voltages, large negative junction magnetoresistances have been observed and are attributed to spin-conserving tunneling transport across an insulating Cr 2 Ge 2 Te 6 layer. With increasing bias, a crossover to Fowler–Nordheim tunneling takes place. The negative sign of the tunneling magnetoresistance suggests that the bottom of a conduction band in Cr 2 Ge 2 Te 6 belongs to minority spins, opposite to the findings of some first-principles calculations. This work shows that the vdW heterostructures based on 2D magnetic insulators are a valuable platform to gain further insight into spin polarized tunneling transport, which is the basis for pursuing high performance spintronic devices and a large variety of quantum phenomena. 
    more » « less
  4. Abstract

    Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm2/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.

     
    more » « less
  5. Abstract

    Crystal phase control still remains a challenge for the precise synthesis of 2D layered metal dichalcogenide (LMD) materials. The T′ phase structure has profound influences on enhancing electrical conductivity, increasing active sites, and improving intrinsic catalytic activity, which are urgently needed for enhancing hydrogen evolution reaction (HER) activity. Theoretical calculations suggest that metastable T′ phase 2D Sn1−xWxS2alloys can be formed by combining W with 1T tin disulfide (SnS2) as a template to achieve a semiconductor‐to‐metallic transition. Herein, 2D Sn1−xWxS2alloys with varyingxare prepared by adjusting the molar ratio of reactants via hydrothermal synthesis, among which Sn0.3W0.7S2displays a maximum of concentration of 81% in the metallic phase and features a distorted octahedral‐coordinated metastable 1T′ phase structure. The obtained 1T′‐Sn0.3W0.7S2has high intrinsic electrical conductivity, lattice distortion, and defects, showing a prominently improved HER catalytic performance. Metallic Sn0.3W0.7S2coupled with carbon black exhibits at least a 215‐fold improvement compared to pristine SnS2. It has excellent long‐term durability and HER activity. This work reveals a general phase transition strategy by using T phase materials as templates and merging heteroatoms to achieve synthetic metastable phase 2D LMDs that have a significantly improved HER catalytic performance.

     
    more » « less