More Like this

1. Mid-IR Emission Characteristics of Low-Phonon Erbium doped Ternary Chloride-based Single Crystals

   E. Brown, Z. D. ( April 2021 , Proc. SPIE 11682, Optical Components and Materials.)

   null (Ed.)

   The mid-infrared fluorescence properties of erbium (Er) doped low-phonon ternary chloride-based crystals (KPb2Cl5,Cs2HfCl6, CsPbCl3, CsCdCl3) have been investigated. All crystals were grown by vertical Bridgman technique. Following optical excitations at 805 nm and 660 nm, all Er3+ doped chlorides exhibited infrared emissions at ~2750, ~3500, and ~4500 nm at room temperature. The mid-infrared emission at 4500 nm originating from the 4I9/2 -> 4I11/2 transition showed long emission lifetime values of ~7.8 ms and ~11.6 ms for Er3+ doped Cs2HfCl6 and CsCdCl3 crystals, respectively. In comparison, Er3+ doped KPb2Cl5 and CsPbCl3 demonstrated shorter lifetimes of ~3 ms and ~1.8 ms, respectively. The temperature dependence of the 4I9/2 decay times was performed for Er3+ doped CsPbCl3 and CsCdCl3 crystals. We observed that the fluorescence lifetimes were nearly independent of the temperature, indicating a negligibly small non-radiative decay rate through multiphonon relaxation, as predicted by the energy gap law for low phonon energy hosts. The room temperature stimulated emission cross-sections for the 4I9/2 -> 4I11/2 transition were determined to be in a range of ~0.14-0.54 x 10-20 cm2 for the studied Er doped chloride crystals. 

   more » « less
2. Ho 3+ doped low-phonon single crystals and chalcogenide glasses for mid-IR source application

   https://doi.org/10.1364/OME.487911  

   Brown, Ei Ei ; Fleischman, Zackery D. ; McKay, Jason ; Merkle, Larry ; Hommerich, Uwe ; Palosz, Witold ; Trivedi, Sudhir ; Dubinskii, Mark ( April 2023 , Optical Materials Express)

   A comparative study was conducted to investigate the 3.9 µm mid-IR emission properties of Ho³⁺doped NaYF₄and CsCdCl₃crystals as well as Ho³⁺doped Ga₂Ge₅S₁₃glass. Following optical excitation at ∼890 nm, all the studied materials exhibited broad mid-IR emissions centered at ∼3.9 µm at room temperature. The mid-IR emission at 3.9 µm, originating from the⁵I₅→⁵I₆transition, showed long emission lifetime values of ∼16.5 ms and ∼1.61 ms for Ho³⁺doped CsCdCl₃crystal and Ga₂Ge₅S₁₃glass, respectively. Conversely, the Ho³⁺doped NaYF₄crystal exhibited a relatively short lifetime of ∼120 µs. Temperature dependent decay time measurements were performed for the⁵I₅excited state for all three samples. The results showed that the emission lifetimes of Ho³⁺:CsCdCl₃and Ho³⁺:Ga₂Ge₅S₁₃were nearly temperature independent over the range studied, while significant emission quenching of the⁵I₅level was observed in Ho³⁺:NaYF₄. The temperature dependence of the multi-phonon relaxation rate for 3.9 µm mid-IR emission in Ho³⁺:NaYF₄crystal was determined. The room temperature stimulated emission cross-sections for all three samples were calculated using the Füchtbauer-Landenburg equation. Furthermore, the results of Judd-Ofelt analysis are presented and discussed.

    

   more » « less
3. Mid-IR spectroscopy of Er 3+ doped low-phonon CsCdCl 3 and CsPbCl 3 crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei Ei ; Fleischman, Zackery D. ; McKay, Jason ; Hommerich, Uwe ; Kabir, Al Amin ; Riggins, Jazmine ; Trivedi, Sudhir ; Dubinskii, Mark ( September 2022 , Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at$\sim <\#comment/>800\mathrm{n}\mathrm{m}$and$\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at$\sim <\#comment/>1.55$,$\sim <\#comment/>2.75$,$\sim <\#comment/>3.5$, and$\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of$\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of$\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be$\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and$\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed.

    

   more » « less
4. Spectroscopic study of Er-doped Ga 2 Ge 5 S 13 glass for mid-IR laser applications

   https://doi.org/10.1364/OME.451131  

   Brown, Ei Ei ; Fleischman, Zackery D. ; McKay, Jason ; Hommerich, Uwe ; Palosz, Witold ; Trivedi, Sudhir ; Dubinskii, Mark ( March 2022 , Optical Materials Express)

   We present mid-IR spectroscopic characterization of the low-phonon chalcogenide glass, Ga₂Ge₅S₁₃(GGS) doped with Er³⁺ions. Under the excitation at ∼800 nm, Er³⁺:GGS exhibited broad mid-IR emission bands centered at ∼2.7, ∼3.5, and ∼4.5 µm at room temperature. The emission lifetime of the⁴I_9/2level of Er³⁺ions in GGS glass was found to be millisecond-long at room temperature. The measured fluorescence lifetimes were nearly independent of temperature, indicating negligibly small nonradiative decay rate for the⁴I_9/2state, as can be expected for a low-maximum-phonon energy host. The transition line-strengths, radiative lifetimes, fluorescence branching ratios were calculated by using the Judd-Ofelt method. The peak stimulated emission cross-section of the⁴I_9/2→⁴I_11/2transition of Er³⁺ion was determined to be ∼0.10×10⁻²⁰cm²at room temperature.

    

   more » « less
5. Spectroscopic Evaluation of Er: Ga2Ge5S13 Glass for Mid-IR Laser Applications

   E. Brown ; Z. D. Fleischman ; J. McKay ; U. Hommerich ; W. Palosz ; S. Trivedi ; and M. Dubinskii ( July 2022 , Optical materials express)

   We present mid-IR spectroscopic characterization of the low-phonon chalcogenide glass, Ga2Ge5S13 (GGS) doped with Er3+ ions. Under the excitation at ∼800 nm, Er3+:GGS exhibited broad mid-IR emission bands centered at ∼2.7, ∼3.5, and ∼4.5 µm at room temperature. The emission lifetime of the 4I9/2 level of Er3+ ions in GGS glass was found to be millisecond-long at room temperature. The measured fluorescence lifetimes were nearly independent of temperature, indicating negligibly small nonradiative decay rate for the 4I9/2 state, as can be expected for a low-maximum-phonon energy host. The transition line-strengths, radiative lifetimes, fluorescence branching ratios were calculated by using the Judd-Ofelt method. The peak stimulated emission cross-section of the 4I9/2 → 4I11/2 transition of Er3+ ion was determined to be ∼0.10×10−20 cm2 at room temperature. 

   more » « less