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Title: Ho 3+ doped low-phonon single crystals and chalcogenide glasses for mid-IR source application
A comparative study was conducted to investigate the 3.9 µm mid-IR emission properties of Ho3+doped NaYF4and CsCdCl3crystals as well as Ho3+doped Ga2Ge5S13glass. Following optical excitation at ∼890 nm, all the studied materials exhibited broad mid-IR emissions centered at ∼3.9 µm at room temperature. The mid-IR emission at 3.9 µm, originating from the5I55I6transition, showed long emission lifetime values of ∼16.5 ms and ∼1.61 ms for Ho3+doped CsCdCl3crystal and Ga2Ge5S13glass, respectively. Conversely, the Ho3+doped NaYF4crystal exhibited a relatively short lifetime of ∼120 µs. Temperature dependent decay time measurements were performed for the5I5excited state for all three samples. The results showed that the emission lifetimes of Ho3+:CsCdCl3and Ho3+:Ga2Ge5S13were nearly temperature independent over the range studied, while significant emission quenching of the5I5level was observed in Ho3+:NaYF4. The temperature dependence of the multi-phonon relaxation rate for 3.9 µm mid-IR emission in Ho3+:NaYF4crystal was determined. The room temperature stimulated emission cross-sections for all three samples were calculated using the Füchtbauer-Landenburg equation. Furthermore, the results of Judd-Ofelt analysis are presented and discussed.  more » « less
Award ID(s):
1827820
PAR ID:
10407506
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
Optical Society of America
Date Published:
Journal Name:
Optical Materials Express
Volume:
13
Issue:
5
ISSN:
2159-3930
Format(s):
Medium: X Size: Article No. 1307
Size(s):
Article No. 1307
Sponsoring Org:
National Science Foundation
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