Re-examination of the Aqueous Stability of Atomic Layer Deposited (ALD) Amorphous Alumina (Al 2 O 3 ) Thin Films and the Use of a Postdeposition Air Plasma Anneal to Enhance Stability
- Award ID(s):
- 1954809
- PAR ID:
- 10328099
- Date Published:
- Journal Name:
- Langmuir
- Volume:
- 37
- Issue:
- 49
- ISSN:
- 0743-7463
- Page Range / eLocation ID:
- 14509 to 14519
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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The dissociation of the CNHicomplex in GaN is studied in detail using photoluminescence measurements and first‐principles calculations. The blue luminescence (BL2) band with a maximum at 3.0 eV is caused by electron transitions from an excited state located at 0.02 eV below the conduction band to the ground state of the CNHidonor with the 0/+ level 0.15 eV above the valence band. The dissociation releases hydrogen atom, and the remaining CNdefect with the −/0 state at 0.92 eV above the valence band is responsible for the yellow band (YL1) with a maximum at about 2.2 eV. The dissociation of the CNHicomplex can be caused by the photoinduced defect reaction mechanism under UV illumination at low temperature (≈20 K), leading to the bleaching of the BL2 band and simultaneous rise in the YL1 band. The bleaching is reversible. Alternatively, the complex dissociates after annealing at temperatures above 600 °C. The activation energy of this process (3–4 eV, depending on the annealing geometry) corresponds to the removal of hydrogen from the sample and not to the dissociation of the complex itself.more » « less
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