Velpula, Ravi Teja, Jain, Barsha, Lenka, Trupti Ranjan, Wang, Renjie, and Nguyen, Hieu Pham. Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport. Retrieved from https://par.nsf.gov/biblio/10331740. Journal of Electronic Materials 51.2 Web. doi:10.1007/s11664-021-09363-z.

Velpula, Ravi Teja, Jain, Barsha, Lenka, Trupti Ranjan, Wang, Renjie, & Nguyen, Hieu Pham. Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport. Journal of Electronic Materials, 51 (2). Retrieved from https://par.nsf.gov/biblio/10331740. https://doi.org/10.1007/s11664-021-09363-z

Velpula, Ravi Teja, Jain, Barsha, Lenka, Trupti Ranjan, Wang, Renjie, and Nguyen, Hieu Pham. "Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport". Journal of Electronic Materials 51 (2). Country unknown/Code not available. https://doi.org/10.1007/s11664-021-09363-z. https://par.nsf.gov/biblio/10331740.

@article{osti_10331740,
place = {Country unknown/Code not available}, title = {Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport}, url = {https://par.nsf.gov/biblio/10331740}, DOI = {10.1007/s11664-021-09363-z}, abstractNote = {}, journal = {Journal of Electronic Materials}, volume = {51}, number = {2}, author = {Velpula, Ravi Teja and Jain, Barsha and Lenka, Trupti Ranjan and Wang, Renjie and Nguyen, Hieu Pham}, }