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Optoelectronic devices combining single-layer graphene (SLG) and colloidal semiconducting nanocrystal (NC) heterojunctions have recently gained significant attention as efficient hybrid photodetectors. While most research has concentrated on systems using heavy metal-based semiconductor NCs, there is a need for further exploration of environmentally friendly nanomaterials, such as Cu2−xS. Chemical ligands play a crucial role in these hybrid photodetectors, as they enable charge transfer between the NCs and SLG. This study investigates the photoresponse of an SLG/Cu2−xS NCs heterojunction, comparing the effect of two short molecules—tetrabutylammonium iodide (TBAI) and 3,4-dimethylbenzenethiol (DMBT)—as surface ligands on the resulting structures. We have analysed charge transfer at the heterojunctions between SLG and the Cu2−xS NCs before and after modification with TBAI and DMBT using Raman spectroscopy and transconductance measurements under thermal equilibrium. The photoresponse of two hybrid devices based on three layers of Cu2₋xS NCs, deposited in one case on SLG/Cu2−xS/TBAI (“TBAI-only” device) and in the other on SLG/Cu2−xS/DMBT (“DMBT + TBAI” device), with a TBAI treatment applied, for both, after each layer deposition, has been evaluated under 450 nm laser diode illumination. The results indicate that the TBAI-only device exhibited a significant increase in photocurrent (4 μA), with high responsivity (40 mA/W) and fast response times (<1 s), while the DMBT + TBAI device had lower photocurrent (0.2 μA) and responsivity (2.4 μA), despite similar response speeds. The difference is attributed to DMBT’s π–π interactions with SLG, which enhances electronic coupling but reduces SLG’s mobility and responsivity.
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High resolution patterning of PbS quantum dots/graphene photodetectors with high responsivity via photolithography with a top graphene layer to protect surface ligands
Photodetectors based on colloidal quantum dots (CQDs) and single layer graphene (SLG) have shown high responsivity due to the synergy of strong light absorption from CQDs and high mobility from SLG. However, it is still challenging to achieve high-density and small-footprint devices on a chip to meet the demand for their integration into electronic devices. Even though there are numerous approaches to pattern the chemically fragile CQD films, usually they require non-conventional approaches such as stamping and surface modification that may be non-compatible with semiconductor processing. In this study, we show that conventional lithography and dry etching can be used to pattern QD active films by employing a graphene monolayer passivation/protective layer that protects the surface ligands of CQDs. This protective layer avoids damage induced by lithography process solvents that deteriorate the carrier mobility of CQDs and therefore the photoresponse. Herein we report patterning of CQDs using conventional UV photolithography, achieving reproducible five-micron length PbS CQDs/SLG photodetectors with a responsivity of 10 8 A W −1 . We have also fabricated thirty-six PbS CQDs/SLG photodetectors on a single chip to establish micron size photodetectors. This process offers an approach to pattern QDs with conventional UV lithography and dry etching semiconductor technology to facilitate their integration into current semiconductor commercial technology.
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- Award ID(s):
- 2046176
- PAR ID:
- 10335076
- Date Published:
- Journal Name:
- Nanoscale Advances
- Volume:
- 3
- Issue:
- 21
- ISSN:
- 2516-0230
- Page Range / eLocation ID:
- 6206 to 6212
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1039/d1na00582k
