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Title: Direct STM measurements of R-type and H-type twisted MoSe 2 /WSe 2
When semiconducting transition metal dichalcogenide heterostructures are stacked, the twist angle and lattice mismatch lead to a periodic moiré potential. As the angle between the layers changes, so do the electronic properties. As the angle approaches 0° or 60°, interesting characteristics and properties, such as modulations in the band edges, flat bands, and confinement, are predicted to occur. Here, we report scanning tunneling microscopy and spectroscopy measurements on the bandgaps and band modulations in MoSe 2 /WSe 2 heterostructures with near 0° rotation (R-type) and near 60° rotation (H-type). We find a modulation of the bandgap for both stacking configurations with a larger modulation for R-type than for H-type as predicted by theory. Furthermore, local density of states images show that electrons are localized differently at the valence band and conduction band edges.
Authors:
; ; ; ; ; ; ; ;
Award ID(s):
2003583
Publication Date:
NSF-PAR ID:
10335511
Journal Name:
APL Materials
Volume:
10
Issue:
3
Page Range or eLocation-ID:
031107
ISSN:
2166-532X
Sponsoring Org:
National Science Foundation
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