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Abstract Spintronics, an evolving interdisciplinary field at the intersection of magnetism and electronics, explores innovative applications of electron charge and spin properties for advanced electronic devices. The topological Hall effect (THE), a key component in spintronics, has gained significance due to emerging theories surrounding noncoplanar chiral spin textures. This study focuses on Mn2‐xZnxSb, a material crystalizing in centrosymmetric space group with rich magnetic phases tunable by Zn contents. Through comprehensive magnetic and transport characterizations, we found that the high‐Zn (x > 0.6) samples display THE which is enhanced with decreasing temperature, while THE in the low‐Zn (x < 0.6) samples show an opposite trend. The coexistence of those distinct temperature dependencies for THE suggests very different magnetic interactions/structures for different compositions and underscores the strong coupling between magnetism and transport in Mn2‐xZnxSb. The findings contribute to understanding topological magnetism in centrosymmetric tetragonal lattices, establishing Mn2‐xZnxSb as a unique platform for exploring tunable transport effects and opening avenues for further exploration in the realm of spintronics.
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Giant topological Hall effect in centrosymmetric tetragonal Mn2−xZnxSb
Topological magnetism typically appears in noncentrosymmetric compounds or compounds with geometric frustration. Here, we report the effective tuning of magnetism in centrosymmetric tetragonal Mn2−xZnxSb by Zn substitution. The magnetism is found to be closely coupled to the transport properties, giving rise to a very large topological Hall effect with fine-tuning of Zn content, which even persists to high temperature (∼250K). The further magnetoentropic analysis suggests that the topological Hall effect is possibly associated with topological magnetism. Our finding suggests Mn2−xZnxSb is a candidate material for a centrosymmetric tetragonal topological magnetic system, offering opportunities for studying and tuning spin textures and developing near room temperature spin-based devices.
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- Award ID(s):
- 1832031
- PAR ID:
- 10336012
- Date Published:
- Journal Name:
- Physical review
- Volume:
- 104
- Issue:
- 17
- ISSN:
- 2469-9950
- Page Range / eLocation ID:
- 174419
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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