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Title: Probing the growth quality of molecular beam epitaxy-grown Bi2Se3 films via in-situ spectroscopic ellipsometry
Award ID(s):
2004812 2039351
PAR ID:
10336983
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Journal of Crystal Growth
Volume:
591
Issue:
C
ISSN:
0022-0248
Page Range / eLocation ID:
126714
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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