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  • Approach to achieving a p -type transparent conducting oxide: Doping of bismuth-alloyed Ga2O3 with a strongly correlated band edge state
Title: Approach to achieving a p -type transparent conducting oxide: Doping of bismuth-alloyed Ga2O3 with a strongly correlated band edge state
Award ID(s):
1652994
NSF-PAR ID:
10337309
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Physical Review B
Volume:
103
Issue:
11
ISSN:
2469-9950
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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