Roy, Pinku, Kunwar, Sundar, Zhang, Di, Chen, Di, Corey, Zachary, Rutherford, Bethany X., Wang, Haiyan, MacManus‐Driscoll, Judith L., Jia, Quanxi, and Chen, Aiping. Role of Defects and Power Dissipation on Ferroelectric Memristive Switching. Retrieved from https://par.nsf.gov/biblio/10339604. Advanced Electronic Materials 8.6 Web. doi:10.1002/aelm.202101392.

Roy, Pinku, Kunwar, Sundar, Zhang, Di, Chen, Di, Corey, Zachary, Rutherford, Bethany X., Wang, Haiyan, MacManus‐Driscoll, Judith L., Jia, Quanxi, & Chen, Aiping. Role of Defects and Power Dissipation on Ferroelectric Memristive Switching. Advanced Electronic Materials, 8 (6). Retrieved from https://par.nsf.gov/biblio/10339604. https://doi.org/10.1002/aelm.202101392

Roy, Pinku, Kunwar, Sundar, Zhang, Di, Chen, Di, Corey, Zachary, Rutherford, Bethany X., Wang, Haiyan, MacManus‐Driscoll, Judith L., Jia, Quanxi, and Chen, Aiping. "Role of Defects and Power Dissipation on Ferroelectric Memristive Switching". Advanced Electronic Materials 8 (6). Country unknown/Code not available. https://doi.org/10.1002/aelm.202101392. https://par.nsf.gov/biblio/10339604.

@article{osti_10339604,
place = {Country unknown/Code not available}, title = {Role of Defects and Power Dissipation on Ferroelectric Memristive Switching}, url = {https://par.nsf.gov/biblio/10339604}, DOI = {10.1002/aelm.202101392}, abstractNote = {}, journal = {Advanced Electronic Materials}, volume = {8}, number = {6}, author = {Roy, Pinku and Kunwar, Sundar and Zhang, Di and Chen, Di and Corey, Zachary and Rutherford, Bethany X. and Wang, Haiyan and MacManus‐Driscoll, Judith L. and Jia, Quanxi and Chen, Aiping}, }