skip to main content

This content will become publicly available on March 4, 2023

Title: Epitaxial (110)-oriented La 0.7 Sr 0.3 MnO 3 film directly on flexible mica substrate
Abstract Manufacture and characterizations of perovskite-mica van der Waals epitaxy heterostructures are a critical step to realize the application of flexible devices. However, the fabrication and investigation of the van der Waals epitaxy architectures grown on mica substrates are mainly limited to (111)-oriented perovskite functional oxide thin films up to now and buffer layers are highly needed. In this work, we directly grew La 0.7 Sr 0.3 MnO 3 (LSMO) thin films on mica substrates without using any buffer layer. By the characterizations of x-ray diffractometer and scanning transmission electron microscopy, we demonstrate the epitaxial growth of the (110)-oriented LSMO thin film on the mica substrate. The LSMO thin film grown on the mica substrate via van der Waals epitaxy adopts domain matching epitaxy instead of conventional lattice matching epitaxy. Two kinds of domain matching relationships between the LSMO thin film and mica substrate are sketched by Visualization for Electronic and STructural Analysis software and discussed. A decent ferromagnetism retains in the (110)-oriented LSMO thin film. Our work demonstrates a new pathway to fabricate (110)-oriented functional oxide thin films on flexible mica substrates directly.
; ; ; ; ; ; ; ; ; ;
Award ID(s):
2016453 1809520
Publication Date:
Journal Name:
Journal of Physics D: Applied Physics
Page Range or eLocation-ID:
Sponsoring Org:
National Science Foundation
More Like this
  1. Nanocrystalline MnFe2O4 has shown promise as a catalyst for the oxygen reduction reaction (ORR) in alkaline solutions, but the material has been sparingly studied as highly ordered thin-film catalysts. To examine the role of surface termination and Mn and Fe site occupancy, epitaxial MnFe2O4 and Fe3O4 spinel oxide films were grown on (001)- and (111)-oriented Nb:SrTiO3 perovskite substrates using molecular beam epitaxy and studied as electrocatalysts for the oxygen reduction reaction (ORR). High-resolution X-ray diffraction (HRXRD) and X-ray photoelectron spectroscopy (XPS) show the synthesis of pure phase materials, while scanning transmission electron microscopy (STEM) and reflection high-energy electron diffraction (RHEED) analysis demonstrate island-like growth of (111) surface-terminated pyramids on both (001)- and (111)-oriented substrates, consistent with the literature and attributed to the lattice mismatch between the spinel films and the perovskite substrate. Cyclic voltammograms under a N2 atmosphere revealed distinct redox features for Mn and Fe surface termination based on comparison of MnFe2O4 and Fe3O4. Under an O2 atmosphere, electrocatalytic reduction of oxygen was observed at both Mn and Fe redox features; however, a diffusion-limited current was only achieved at potentials consistent with Fe reduction. This result contrasts with that of nanocrystalline MnFe2O4 reported in the literature where the diffusion-limitedmore »current is achieved with Mn-based catalysis. This difference is attributed to a low density of Mn surface termination, as determined by the integration of current from CVs collected under N2, in addition to low conductivity through the MnFe2O4 film due to the degree of inversion. Such low densities are attributed to the synthetic method and island-like growth pattern and highlight challenges in studying ORR catalysis with single-crystal spinel materials.« less
  2. Single-crystalline membranes of functional materials enable the tuning of properties via extreme strain states; however, conventional routes for producing membranes require the use of sacrificial layers and chemical etchants, which can both damage and limit the ability to make membranes ultrathin. Here we demonstrate the epitaxial growth of cubic and hexagonal Heusler compounds on graphene-terminated Al$_2$O$_3$ substrates. The weak Van der Waals interactions of graphene enable the mechanical exfoliation of LaPtSb and GdPtSb films to yield free-standing membranes. Despite the presence of the graphene interlayer, the Heusler films have epitaxial registry to the underlying sapphire, as revealed by x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy. Some films show a uniform in-plane rotation of several degrees with respect to the substrate, which we attribute to a combination of lattice mismatch and weakened Heusler film / sapphire substrate interactions through graphene. The residual resistivity of semi free-standing films on graphene-terminated substrates is similar to the residual resistivity of films grown by direct epitaxy. Our graphene-mediated approach provides a promising platform for tuning the magnetic, topological, and multiferroic properties of Heuslers in a clean, single-crystalline membrane system.
  3. Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding between crystalline substrate and atomic building blocks, has been a key technique in the thin-film and heterostructure applications of semiconductors. However, the epitaxial growth technique is limited by different lattice mismatch and thermal expansion coefficients of dissimilar crystals. Two-dimensional (2D) materials with dangling bond-free van der Waals surfaces have been used as growth templates for the hetero-integration of highly mismatched materials. Moreover, the ultrathin nature of 2D materials also allows for remote epitaxial growth and confinement growth of quasi-2D materials via intercalation. Here, we review the hetero-dimensional growth on 2D substrates: van der Waals epitaxy (vdWE), quasi vdWE, and intercalation growth. We discuss the growth mechanism and fundamental challenges for vdWE on 2D substrates. We also examine emerging vdWE techniques that use epitaxial liftoff and confinement epitaxial growth in detail. Finally, we give a brief review of radiation effects in 2D materials and contrast the damage induced with their 3D counterparts.

  4. Abstract This work focuses on the nature of magnetic anisotropy in 2.5–16 micron thick films of nickel ferrite (NFO) grown by liquid phase epitaxy (LPE). The technique, ideal for rapid growth of epitaxial oxide films, was utilized for films on (100) and (110) substrates of magnesium gallate (MGO). The motivation was to investigate the dependence of the growth induced anisotropy field on film thickness since submicron films of NFO were reported to show a very high anisotropy. The films grown at 850–875 C and subsequently annealed at 1000 C were found to be epitaxial, with the out-of-plane lattice constant showing unanticipated decrease with increasing film thickness and the estimated in-plane lattice constant increasing with the film thickness. The uniaxial anisotropy field H σ , estimated from X-ray diffraction data, ranged from 2.8–7.7 kOe with the films on (100) MGO having a higher H σ value than for the films on (110) MGO. Ferromagnetic resonance (FMR) measurements for in-plane and out-of-plane static magnetic field were utilized to determine both the magnetocrystalline the anisotropy field H 4 and the uniaxial anisotropy field H a . Values of H 4 range from −0.24 to −0.86 kOe. The uniaxial anisotropy field H a wasmore »an order of magnitude smaller than H σ and it decreased with increasing film thickness for NFO films on (100) MGO, but H a increased with film thickness for films on (110) MGO substrates. These observations indicate that the origin of the induced anisotropy could be attributed to several factors including (i) strain due to mismatch in the film-substrate lattice constants, (ii) possible variations in the bond lengths and bond angles in NFO during the growth process, and (iii) the strain arising from mismatch in the thermal expansion coefficients of the film and the substrate due to the high growth and annealing temperatures involved in the LPE technique. The LPE films of NFO on MGO substrates studied in this work are of interest for use in high frequency devices.« less
  5. Flexible electronics and mechanically bendable devices based on Group III-N semiconductor materials are emerging; however, there are several challenges in manufacturing, such as cost reduction, device stability and flexibility, and device-performance improvement. To overcome these limitations, it is necessary to replace the brittle and expensive semiconductor wafers with single-crystalline flexible templates for a new-bandgap semiconductor platform. The substrates in the new concept of semiconductor materials have a hybrid structure consisting of a single-crystalline III-N thin film on a flexible metal tape substrate which provides a convenient and scalable roll-to-roll deposition process. We present a detailed study of a unique and simple direct epitaxial growth technique for crystallinity transformation to deliver single-crystalline GaN thin film with highly oriented grains along both a -axis and c -axis directions on a flexible and polycrystalline copper tape. A 2-dimensional (2D) graphene having the same atomic configuration as the (0001) basal plane of wurtzite structure is employed as a seed layer which plays a key role in following the III-N epitaxy growth. The DC reactive magnetron sputtering method is then applied to deposit an AlN layer under optimized conditions to achieve preferred-orientation growth. Finally, single-crystalline GaN layers (∼1 μm) are epitaxially grown using metal organicmore »chemical vapor deposition (MOCVD) on the biaxially-textured buffer layer. The flexible single-crystalline GaN film obtained using this method provides a new way for a wide-bandgap semiconductor platform pursuing flexible, high-performance, and versatile device technology.« less