Bi2NiMnO6(BNMO) epitaxial thin films with a layered supercell (LSC) structure have emerged as a promising single‐phase multiferroic material recently. Because of the required strain state for the formation of the LSC structures, most of the previous BNMO films are demonstrated on rigid oxide substrates such as SrTiO3and LaAlO3. Here, the potential of BNMO films grown on muscovite mica substrates via van der Waals epitaxy, spotlighting their suitability for cutting‐edge flexible device applications is delved. Comprehensive scanning transmission electron microscopy/energy‐dispersive X‐ray analyses reveal a layered structure in the BNMO film and a pristine interface with the mica substrate, indicating high‐quality deposition and minimal interfacial defects. Capitalizing on its unique property of easily cleavable layers due to weak van der Waals forces in mica substrates, flexible BNMO/mica samples are fixed. A standout feature of the BNMO film grown on mica substrate is its consistent multiferroic properties across varied mechanical conditions. A novel technique is introduced for thinning the mica substrate and subsequent transfer of the sample, with post‐transfer analyses validating the preserved structural and magnetic attributes of the film. Overall, this study illuminates the resilient multiferroic properties of BNMO films on mica, offering promising avenues for their integration for next‐generation flexible electronics.
- NSF-PAR ID:
- 10341594
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 55
- Issue:
- 22
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- 224002
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
-
more » « less
We report on the growth and characterization of optical quality multiple quantum well structures of Zn
x Cd1−x Se/Znx Cdy Mg1−x −y Se on an ultra‐thin Bi2Se3/CdTe virtual substrate on c‐plane Al2O3(sapphire). Excellent quality highly oriented films grown along the (111) direction were achieved as evidenced by reflection high energy electron diffraction and X‐ray diffraction studies. We also observed room temperature and 77 K photoluminescence emission with peak energies at 77 K of 2.407 eV and linewidths of 56 meV comparable to those achieved on structures grown on InP. Exfoliation of the structures is also possible due to the van der Waals bonding of Bi2Se3. Exfoliated (substrate free) films exhibit photoluminescence emission nearly identical to that of the supported film. Additionally, contactless electroreflectance measurements show good agreement with simulations of the multiple quantum well structure as well as evidence of excited state levels. These results open new avenues of research for substrate independent epitaxy and the possibility of ultra‐thin electronics. -
Nanocrystalline MnFe2O4 has shown promise as a catalyst for the oxygen reduction reaction (ORR) in alkaline solutions, but the material has been sparingly studied as highly ordered thin-film catalysts. To examine the role of surface termination and Mn and Fe site occupancy, epitaxial MnFe2O4 and Fe3O4 spinel oxide films were grown on (001)- and (111)-oriented Nb:SrTiO3 perovskite substrates using molecular beam epitaxy and studied as electrocatalysts for the oxygen reduction reaction (ORR). High-resolution X-ray diffraction (HRXRD) and X-ray photoelectron spectroscopy (XPS) show the synthesis of pure phase materials, while scanning transmission electron microscopy (STEM) and reflection high-energy electron diffraction (RHEED) analysis demonstrate island-like growth of (111) surface-terminated pyramids on both (001)- and (111)-oriented substrates, consistent with the literature and attributed to the lattice mismatch between the spinel films and the perovskite substrate. Cyclic voltammograms under a N2 atmosphere revealed distinct redox features for Mn and Fe surface termination based on comparison of MnFe2O4 and Fe3O4. Under an O2 atmosphere, electrocatalytic reduction of oxygen was observed at both Mn and Fe redox features; however, a diffusion-limited current was only achieved at potentials consistent with Fe reduction. This result contrasts with that of nanocrystalline MnFe2O4 reported in the literature where the diffusion-limited current is achieved with Mn-based catalysis. This difference is attributed to a low density of Mn surface termination, as determined by the integration of current from CVs collected under N2, in addition to low conductivity through the MnFe2O4 film due to the degree of inversion. Such low densities are attributed to the synthetic method and island-like growth pattern and highlight challenges in studying ORR catalysis with single-crystal spinel materials.more » « less
-
null (Ed.)Single-crystalline membranes of functional materials enable the tuning of properties via extreme strain states; however, conventional routes for producing membranes require the use of sacrificial layers and chemical etchants, which can both damage and limit the ability to make membranes ultrathin. Here we demonstrate the epitaxial growth of cubic and hexagonal Heusler compounds on graphene-terminated Al$_2$O$_3$ substrates. The weak Van der Waals interactions of graphene enable the mechanical exfoliation of LaPtSb and GdPtSb films to yield free-standing membranes. Despite the presence of the graphene interlayer, the Heusler films have epitaxial registry to the underlying sapphire, as revealed by x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy. Some films show a uniform in-plane rotation of several degrees with respect to the substrate, which we attribute to a combination of lattice mismatch and weakened Heusler film / sapphire substrate interactions through graphene. The residual resistivity of semi free-standing films on graphene-terminated substrates is similar to the residual resistivity of films grown by direct epitaxy. Our graphene-mediated approach provides a promising platform for tuning the magnetic, topological, and multiferroic properties of Heuslers in a clean, single-crystalline membrane system.more » « less
-
more » « less
Abstract Realizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here, the epitaxial growth of monocrystalline, covalent Cr5Te82D crystals on monolayer vdW WSe2by chemical vapor deposition is reported, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few tens of micrometers, is fully commensurate with that of WSe2via 3 × 3 (Cr5Te8)/7 × 7 (WSe2) supercell matching, forming a single‐crystalline moiré superlattice. This work establishes a conceptually distinct paradigm of thin‐film epitaxy, termed “dative epitaxy”, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te82D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1088/1361-6463/ac570d
