Smith Pellizzeri, Tiffany M.; Morrison, Gregory; McMillen, Colin D.; zur Loye, Hans‐Conrad; Kolis, Joseph W.
(, European Journal of Inorganic Chemistry)
Colin-Ulloa, Erika; Fitzgerald, Andrew M.; Mann, Javery; Montazeri, Kiana; Barsoum, Michel W.; Ngo, Ken A.; Uzarski, Joshua R.; Titova, Lyubov V.
(, 2022 47th International Conference of Infrared, Millimeter and Terahertz Waves)
Meng, Lingyu, Feng, Zixuan, Bhuiyan, A F, and Zhao, Hongping. High-Mobility MOCVD β-Ga 2 O 3 Epitaxy with Fast Growth Rate Using Trimethylgallium. Retrieved from https://par.nsf.gov/biblio/10343520. Crystal Growth & Design 22.6 Web. doi:10.1021/acs.cgd.2c00290.
@article{osti_10343520,
place = {Country unknown/Code not available},
title = {High-Mobility MOCVD β-Ga 2 O 3 Epitaxy with Fast Growth Rate Using Trimethylgallium},
url = {https://par.nsf.gov/biblio/10343520},
DOI = {10.1021/acs.cgd.2c00290},
abstractNote = {},
journal = {Crystal Growth & Design},
volume = {22},
number = {6},
author = {Meng, Lingyu and Feng, Zixuan and Bhuiyan, A F and Zhao, Hongping},
}
Warning: Leaving National Science Foundation Website
You are now leaving the National Science Foundation website to go to a non-government website.
Website:
NSF takes no responsibility for and exercises no control over the views expressed or the accuracy of
the information contained on this site. Also be aware that NSF's privacy policy does not apply to this site.