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Title: High-Mobility MOCVD β-Ga 2 O 3 Epitaxy with Fast Growth Rate Using Trimethylgallium
Award ID(s):
2019753 1810041
NSF-PAR ID:
10343520
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Crystal Growth & Design
Volume:
22
Issue:
6
ISSN:
1528-7483
Page Range / eLocation ID:
3896 to 3904
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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