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Title: High-Mobility MOCVD β-Ga 2 O 3 Epitaxy with Fast Growth Rate Using Trimethylgallium
Authors:
; ; ;
Award ID(s):
2019753 1810041
Publication Date:
NSF-PAR ID:
10343520
Journal Name:
Crystal Growth & Design
Volume:
22
Issue:
6
Page Range or eLocation-ID:
3896 to 3904
ISSN:
1528-7483
Sponsoring Org:
National Science Foundation
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