Graphene oxide (GO) nanosheets stacked in parallel with subnanometer channels can exhibit an excellent size‐sieving ability for membrane‐based gas separation. However, gas molecules have to diffuse through the tortuous nanochannels, leading to low permeability. Herein we demonstrate two versatile approaches to modify the GO (before membrane fabrication by vacuum‐filtration) to collectively increase gas permeability, etching using hydrogen peroxide to generate in‐plane nanopores and acidifying using hydrochloric acid. For example, a membrane prepared at a pH of 5.0 using the 4‐h‐etched GO (HGO‐4h) shows He permeability of 5.3 Barrer and He/CH4selectivity of 800, which are 5 times and 1.5 times those of the GO membranes, respectively. Decreasing the pH from 5.0 to 2.0 for HGO‐4h enhances He permeability to 57 Barrer and He/CH4selectivity to 1,800. The HGO‐4h prepared at the pH of 2.0 exhibits separation properties of H2/CO2, H2/N2, He/N2, and He/CH4surpassing their corresponding upper bounds.
Scalable nanomanufacturing of holey graphene via chemical etching: an investigation into process mechanisms
Graphene with in-plane nanoholes, named holey graphene, shows great potential in electrochemical applications due to its fast mass transport and improved electrochemical activity. Scalable nanomanufacturing of holey graphene is generally based on chemical etching using hydrogen peroxide to form through-the-thickness nanoholes on the basal plane of graphene. In this study, we probe into the fundamental mechanisms of nanohole formation under peroxide etching via an integrated experimental and computational effort. The research results show that the growth of nanoholes during the etching of graphene oxide is achieved by a three-stage reduction–oxidation–reduction procedure. First, it is demonstrated that vacancy defects are formed via a partial reduction-based pretreatment. Second, hydrogen peroxide reacts preferentially with the edge-sites of defect areas on graphene oxide sheets, leading to the formation of various oxygen-containing functional groups. Third, the carbon atoms around the defects are removed along with the neighboring carbon atoms via reduction. By advancing the understanding of process mechanisms, we further demonstrate an improved nanomanufacturing strategy, in which graphene oxide with a high density of defects is introduced for peroxide etching, leading to enhanced nanohole formation.
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- NSF-PAR ID:
- 10344652
- Date Published:
- Journal Name:
- Nanoscale
- Volume:
- 14
- Issue:
- 12
- ISSN:
- 2040-3364
- Page Range / eLocation ID:
- 4762 to 4769
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract -
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/d1nr08437b
