Future molecular microelectronics require the electronic conductivity of the device to be tunable without impairing the voltage control of the molecular electronic properties. This work reports the influence of an interface between a semiconducting polyaniline polymer or a polar poly-D-lysine molecular film and one of two valence tautomeric complexes, i.e. , [Co III (SQ)(Cat)(4-CN-py) 2 ] ↔ [Co II (SQ) 2 (4-CN-py) 2 ] and [Co III (SQ)(Cat)(3-tpp) 2 ] ↔ [Co II (SQ) 2 (3-tpp) 2 ]. The electronic transitions and orbitals are identified using X-ray photoemission, X-ray absorption, inverse photoemission, and optical absorption spectroscopy measurements that are guided by density functional theory. Except for slightly modified binding energies and shifted orbital levels, the choice of the underlying substrate layer has little effect on the electronic structure. A prominent unoccupied ligand-to-metal charge transfer state exists in [Co III (SQ)(Cat)(3-tpp) 2 ] ↔ [Co II (SQ) 2 (3-tpp) 2 ] that is virtually insensitive to the interface between the polymer and tautomeric complexes in the Co II high-spin state.
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Exploring the molecular electronic device applications of synthetically versatile silicon pincer complexes as charge transport and electroluminescent layers
Hexacoordinate silicon pincer complexes using 2,6-bis(benzimidazol-2-yl)pyridine (bzimpy) ligands have been developed as a multifunctional, molecular electronic materials platform. We report the synthesis, characterization, and device application of a variety of Si(pincer) 2 complexes that exhibit tunable optoelectronic properties and excellent thermal stabilities. Promising, ambipolar charge carrier properties and excimeric electroluminescence were obtained from thermally deposited films using several device architectures. Incorporation of the complexes as a thin, interfacial contact and electron transport layer improved organic solar cell efficiencies by as much as 50%. The versatility and tailorability of this class of silicon complexes provides promising evidence for their future application in molecular electronic devices.
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- Award ID(s):
- 1800331
- PAR ID:
- 10347345
- Date Published:
- Journal Name:
- Materials Advances
- Volume:
- 3
- Issue:
- 5
- ISSN:
- 2633-5409
- Page Range / eLocation ID:
- 2373 to 2379
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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