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Title: Single-Sweep vs. Banded Characterizations of a D-band Ultra-Low-Loss SiC Substrate-Integrated Waveguide
A D-band (110‒170 GHz) SiC substrate-integrated waveguide (SIW) is characterized on-wafer by two different vector network analyzers (VNAs): a 220-GHz single-sweep VNA and an 110-GHz VNA with WR8 (90‒140 GHz) and WR5 (140‒220 GHz) frequency extenders. To facilitate probing, the SIW input and output are transitioned to grounded coplanar waveguides (GCPWs). Two-tier calibration is used to de-embed the SIWGCPW transitions as well as to extract the intrinsic SIW characteristics. In general, the two VNAs are in agreement and both result in an ultra-low insertion loss of approximately 0.2 dB/mm for the same SIW, despite stitching errors at band edges.  more » « less
Award ID(s):
2132323 2117305
PAR ID:
10350284
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
IEEE
Date Published:
ISBN:
978-1-6654-6894-7
Subject(s) / Keyword(s):
Calibration microwave measurement millimeter wave on-wafer measurement vector network analyzer
Format(s):
Medium: X
Location:
Denver, CO, USA
Sponsoring Org:
National Science Foundation
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