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  • Field-free current-induced magnetization switching in GdFeCo: A competition between spin–orbit torques and Oersted fields
Title: Field-free current-induced magnetization switching in GdFeCo: A competition between spin–orbit torques and Oersted fields
Switching of perpendicular magnetization via spin–orbit torque (SOT) is of particular interest in the development of non-volatile magnetic random access memory (MRAM) devices. We studied current-induced magnetization switching of Ir/GdFeCo/Cu/Pt heterostructures in a Hall cross geometry as a function of the in-plane applied magnetic field. Remarkably, magnetization switching is observed at zero applied field. This is shown to result from the competition between SOT, the Oersted field generated by the charge current, and the material's coercivity. Our results show a means of achieving zero-field switching that can impact the design of future spintronics devices, such as SOT-MRAM.  more » « less
Award ID(s):
2105114
PAR ID:
10352021
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
132
Issue:
8
ISSN:
0021-8979
Page Range / eLocation ID:
083903
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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