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Title: Late-time Evolution and Modeling of the Off-axis Gamma-Ray Burst Candidate FIRST J141918.9+394036
Abstract We present new radio and optical data, including very-long-baseline interferometry, as well as archival data analysis, for the luminous, decades-long radio transient FIRST J141918.9+394036. The radio data reveal a synchrotron self-absorption peak around 0.3 GHz and a radius of around 1.3 mas (0.5 pc) 26 yr post-discovery, indicating a blastwave energy ∼5 × 10 50 erg. The optical spectrum shows a broad [O iii ] λ 4959,5007 emission line that may indicate collisional excitation in the host galaxy, but its association with the transient cannot be ruled out. The properties of the host galaxy are suggestive of a massive stellar progenitor that formed at low metallicity. Based on the radio light curve, blastwave velocity, energetics, nature of the host galaxy and transient rates, we find that the properties of J1419+3940 are most consistent with long gamma-ray burst (LGRB) afterglows. Other classes of (optically discovered) stellar explosions as well as neutron star mergers are disfavored, and invoking any exotic scenario may not be necessary. It is therefore likely that J1419+3940 is an off-axis LGRB afterglow (as suggested by Law et al. and Marcote et al.), and under this premise the inverse beaming fraction is found to be f b − more » 1 ≃ 280 − 200 + 700 , corresponding to an average jet half-opening angle < θ j > ≃ 5 − 2 + 4 degrees (68% confidence), consistent with previous estimates. From the volumetric rate we predict that surveys with the Very Large Array, Australian Square Kilometre Array Pathfinder, and MeerKAT will find a handful of J1419+3940-like events over the coming years. « less
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The Astrophysical Journal
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National Science Foundation
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From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less