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Title: Modeling electron transfer from the barrier in InAs/GaAs quantum dot-well structure
Abstract We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological efective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the efect of QD-QW geometry variations. The relation to the PL experiments is shown.  more » « less
Award ID(s):
2101041
PAR ID:
10357159
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Journal of Physics: Conference Series
Volume:
2122
Issue:
1
ISSN:
1742-6588
Page Range / eLocation ID:
012011
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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