More Like this

1. Instability of Charge Qubit Outfitted in a Double Quantum Dot

   https://doi.org/10.26456/mmg/2021-931  

   Filikhin, I. ; Karoui, A. ; Mitic, V. ; Zatezalo, T. ; Vlahovic, B. ( November 2021 , Mathematical Modelling and Geometry)

   We study electron tunneling in binary quantum systems as double quantum dot (DQD) and double quantum well (DQW), considered as two-level systems. The Schrodinger equation for this system is reduced using single band kp-effective Hamiltonian, and is solved numerically. We calculate full electron spectrum E, n = 1,2 ... in the bi-confinement potential. The tunneling in DQD is studied in relation to two factors, a coupling coefficient W and an asymmetry factor A of the potential. The ratio W/A defines the electron localization in DQD. The cases of ideal and almost ideal DQD are examined and compared. We are modeling the effects of environmental influence and fluctuations of electrical pulse on the coherence of DQD based charge qubit. In particular, we show that the coupling in the ideal DQD (A=0) is unstable for any small fluctuations of A. 

   more » « less
2. Nonlocal magnon entanglement generation in coupled hybrid cavity systems

   https://doi.org/10.1364/OL.414975  

   Luo, Da-Wei ; Qian, Xiao-Feng ; Yu, Ting ( February 2021 , Optics Letters)

   We investigate dynamical generation of macroscopic nonlocal entanglements between two remote massive magnon–superconducting-circuit hybrid systems. Two fiber-coupled microwave cavities are employed to serve as an interaction channel connecting two sets of macroscopic hybrid units, each containing a magnon (hosted by an yttrium–iron–garnet sphere) and a superconducting-circuit qubit. Surprisingly, it is found that stronger coupling does not necessarily mean faster entanglement generation. The proposed hybrid system allows the existence of an optimal fiber coupling strength that requires the shortest amount of time to generate a systematic maximal entanglement. Our theoretical results are shown to be within the scope of specific parameters that can be achieved with current technology. The noise effects on the implementation of systems are also treated in a general environment, suggesting the robustness of entanglement generation. Our discrete-variable qubit-like entanglement theory of magnons may lead to direct applications in various quantum information tasks.

    

   more » « less
3. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

   more » « less
4. Engineering optomechanically induced transparency by coupling a qubit to a spinning resonator

   https://doi.org/10.1364/JOSAB.478320  

   Burns, Jessica ; Root, Owen ; Jing, Hui ; Mirza, Imran M. ( April 2023 , Journal of the Optical Society of America B)

   We theoretically study the spectral properties of a pump–probe driven hybrid spinning optomechanical ring resonator optically coupled with a two-level quantum emitter (QE or qubit). Recently, we have shown [Opt. Express27,25515(2019)OPEXFF1094-408710.1364/OE.27.025515] that in the absence of the emitter, the coupled cavity version of this setup is not only capable of non-reciprocal light propagation but can also exhibit slow and fast light propagation. In this work, we investigate in what ways the presence of a single QE coupled with the optical whispering gallery modes of a spinning optomechanical resonator can alter the probe light non-reciprocity. Under the weak-excitation assumption and mean-field approximation, we find that the interplay between the rotational/spinning Sagnac effect and qubit coupling can lead to enhancement of both the optomechanically induced transparency peak value and the width of the transparency window due to the opening of a qubit-assisted backreflection channel. However, compared to the no-qubit case, we notice that such enhancement comes at the cost of degrading the group delay in probe light transmission by a factor of 1/2 for clockwise rotary directions. The target applications of these results can be in the areas of quantum circuitry and in non-reciprocal quantum communication protocols where QEs are a key component.

    

   more » « less
5. Spontaneous Exciton Collapse in a Strongly Flattened Ellipsoidal InSb Quantum Dot

   https://doi.org/10.1186/s11671-022-03710-7  

   Dvoyan, K. G. ; Karoui, A. ; Vlahovic, B. ( August 2022 , Nanoscale Research Letters)

   Electronic and excitonic states in anInSbstrongly flattened ellipsoidal quantum dot (QD) with complicated dispersion law are theoretically investigated within the framework of the geometric adiabatic approximation in the strong, intermediate, and weak quantum confinement regimes. For the lower levels of the spectrum, the square root dependence of energy on QD sizes is revealed in the case of Kane’s dispersion law. The obtained results are compared to the case of a parabolic (standard) dispersion law of charge carriers. The possibility of the accidental exciton instability is revealed for the intermediate quantum confinement regime. For the weak quantum confinement regime, the motion of the exciton's center-of-gravity is quantized, which leads to the appearance of additional Coulomb-like sub-levels. It is revealed that in the case of the Kane dispersion law, the Coulomb levels shift into the depth of the forbidden band gap, moving away from the quantum confined level, whereas in the case of the parabolic dispersion law, the opposite picture is observed. The corresponding selection rules of quantum transitions for the interband absorption of light are obtained. New selection rules of quantum transitions between levels conditioned by 2D exciton center of mass vertical motion quantization in a QD are revealed. The absorption threshold behavior characteristics depending on the QDs geometrical sizes are also revealed.

    

   more » « less