Zintl phase Mg 3 Sb 2 , which has ultra-low thermal conductivity, is a promising anisotropic thermoelectric material. It is worth noting that the prediction and experiment value of lattice thermal conductivity ( κ ) maintain a remarkable difference, troubling the development and application. Thus, we firstly included the four-phonon scattering processes effect and performed the Peierls–Boltzmann transport equation (PBTE) combined with the first-principles lattice dynamics to study the lattice thermal transport in Mg 3 Sb 2 . The results showed that our theoretically predicted κ is consistent with the experimentally measured, breaking through the limitations of the traditional calculation methods. The prominent four-phonon scatterings decreased phonon lifetime, leading to the κ of Mg 3 Sb 2 at 300 K from 2.45 (2.58) W m −1 K −1 to 1.94 (2.19) W m −1 K −1 along the in (cross)-plane directions, respectively, and calculation accuracy increased by 20%. This study successfully explains the lattice thermal transport behind mechanism in Mg 3 Sb 2 and implies guidance to advance the prediction accuracy of thermoelectric materials.
more »
« less
The intrinsic thermal transport properties of the biphenylene network and the influence of hydrogenation: a first-principles study
Utilizing first-principles calculations combined with phonon Boltzmann transport theory up to fourth-order anharmonicity, we systematically investigate the thermal transport properties of the biphenylene network [BPN, recently synthesized experimentally by Fan et al. , Science , 2021, 372 , 852–856] and hydrogenated BPN (HBPN). The calculations show that four-phonon scattering significantly affects the lattice thermal conductivity ( κ ) of BPN. At room temperature, the κ of BPN is reduced from 582.32 (1257.07) W m −1 K −1 to 309.56 (539.88) W m −1 K −1 along the x ( y ) direction after considering the four-phonon scattering. Moreover, our results demonstrate that the thermal transport in BPN could also be greatly suppressed by hydrogenation, where the κ of HBPN along the x ( y ) direction is merely 16.62% (10.14%) of that of pristine BPN at 300 K. The mechanism causing such an obvious decrease of κ of HBPN is identified to be due to the enhanced phonon scattering rate and reduced group velocity, which is further revealed by the increased scattering phase space and weakened C–C bond. The results presented in this work shed light on the intrinsic thermal transport features of BPN and HBPN, which will help us to understand the phonon transport processes and pave the way for their future developments in the thermal field.
more »
« less
- Award ID(s):
- 2030128
- NSF-PAR ID:
- 10358954
- Date Published:
- Journal Name:
- Journal of Materials Chemistry C
- Volume:
- 9
- Issue:
- 47
- ISSN:
- 2050-7526
- Page Range / eLocation ID:
- 16945 to 16951
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Engineering the thermal properties in solids is important for both fundamental physics ( e.g. electric and phonon transport) and device applications ( e.g. thermal insulating coating, thermoelectrics). In this paper, we report low thermal transport properties of four selenide compounds (BaAg 2 SnSe 4 , BaCu 2 GeSe 4 , BaCu 2 SnSe 4 and SrCu 2 GeSe 4 ) with experimentally-measured thermal conductivity as low as 0.31 ± 0.03 W m −1 K −1 at 673 K for BaAg 2 SnSe 4 . Density functional theory calculations predict κ < 0.3 W m −1 K −1 for BaAg 2 SnSe 4 due to scattering from weakly-bonded Ag–Ag dimers. Defect calculations suggest that achieving high hole doping levels in these materials could be challenging due to monovalent ( e.g. , Ag) interstitials acting as hole killers, resulting in overall low electrical conductivity in these compounds.more » « less
-
more » « less
Abstract The lattice thermal conductivity (κph) of metals and semimetals is limited by phonon‐phonon scattering at high temperatures and by electron‐phonon scattering at low temperatures or in some systems with weak phonon‐phonon scattering. Following the demonstration of a phonon band engineering approach to achieve an unusually high κphin semiconducting cubic‐boron arsenide (c‐BAs), recent theories have predicted ultrahigh κphof the semimetal tantalum nitride in the θ‐phase (θ‐TaN) with hexagonal tungsten carbide (WC) structure due to the combination of a small electron density of states near the Fermi level and a large phonon band gap, which suppress electron‐phonon and three‐phonon scattering, respectively. Here, measurements on the thermal and electrical transport properties of polycrystalline θ‐TaN converted from the ε phase via high‐pressure synthesis are reported. The measured thermal conductivity of the θ‐TaN samples shows weak temperature dependence above 200 K and reaches up to 90 Wm−1K−1, one order of magnitude higher than values reported for polycrystalline ε‐TaN and δ‐TaN thin films. These results agree with theoretical calculations that account for phonon scattering by 100 nm‐level grains and suggest κphincrease above the 249 Wm−1K−1value predicted for single‐crystal WC when the grain size of θ‐TaN is increased above 400 nm.
-
The Mg 3 Sb 2− x Bi x family has emerged as the potential candidates for thermoelectric applications due to their ultra-low lattice thermal conductivity ( κ L ) at room temperature (RT) and structural complexity. Here, using ab initio calculations of the electron-phonon averaged (EPA) approximation coupled with Boltzmann transport equation (BTE), we have studied electronic, phonon and thermoelectric properties of Mg 3 Sb 2− x Bi x (x = 0, 1, and 2) monolayers. In violation of common mass-trend expectations, increasing Bi element content with heavier Zintl phase compounds yields an abnormal change in κ L in two-dimensional Mg 3 Sb 2− x Bi x crystals at RT (∼0.51, 1.86, and 0.25 W/mK for Mg 3 Sb 2 , Mg 3 SbBi, and Mg 3 Bi 2 ). The κ L trend was detailedly analyzed via the phonon heat capacity, group velocity and lifetime parameters. Based on quantitative electronic band structures, the electronic bonding through the crystal orbital Hamilton population (COHP) and electron local function analysis we reveal the underlying mechanism for the semiconductor-semimetallic transition of Mg 3 Sb 2-− x Bi x compounds, and these electronic transport properties (Seebeck coefficient, electrical conductivity, and electronic thermal conductivity) were calculated. We demonstrate that the highest dimensionless figure of merit ZT of Mg 3 Sb 2− x Bi x compounds with increasing Bi content can reach ∼1.6, 0.2, and 0.6 at 700 K, respectively. Our results can indicate that replacing heavier anion element in Zintl phase Mg 3 Sb 2− x Bi x materials go beyond common expectations (a heavier atom always lead to a lower κ L from Slack’s theory), which provide a novel insight for regulating thermoelectric performance without restricting conventional heavy atomic mass approach.more » « less
-
Utilizing metal nanoparticles (NPs) in Additive Manufacturing (AM) enables fabricating parts with submicrometer resolution. The thermal properties of metal NPs are drastically different from their bulk and micronsize counterparts due to nanoscale thermal transport effects, e.g. ballistic phonon/electron transport instead of diffusive transport described by Fourier’s Law. Rough estimation of metal NPs’ thermal properties with bulk values will inevitably cause large errors for AM applications, because thermal properties evolve along with the sintering process. In this study, thermal properties of 100 nm Cu NPs are examined at different sintering stages. Effective density is measured between 3500 and 5300 kg/m 3 at a sintering temperature range of 100 and 400 °C, and the sintering of Cu NPs is determined to be around 300 °C using Thermogravimetry analysis (TGA) with Differential Scanning Calorimeter (DSC). A picosecond Transient Thermoreflectance (ps-TTR) technique is employed to measure the effective thermal conductivity of Cu NPs, which jumps from 18.5 ± 0.8 W/m ∙K to 26.8 ± 2.1 W/m ⋅K onset of sintering around 300 °C. These values are less than 1/10 of the bulk value (398 W/m ⋅K). The effective thermal conductivity is almost independent on porosity except in the temperature range close to 300 °C, which comes from two factors related with nanoscale thermal transport: (i) ballistic electron transport is important in particles with size comparable with electron mean free path; (ii) effective thermal conductivity is dominated by interface scattering on particles surfaces. Our results provide insights about the importance on accurate characterization of thermal properties in metal nanoparticles due to the nanoscale phenomena.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/D1TC04154A
