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Title: Selective area epitaxy of GaAs films using patterned graphene on Ge
Award ID(s):
1752797 1720415
NSF-PAR ID:
10362445
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
120
Issue:
5
ISSN:
0003-6951
Page Range / eLocation ID:
Article No. 051603
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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