Selective area epitaxy of GaAs films using patterned graphene on Ge
- PAR ID:
- 10362445
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 120
- Issue:
- 5
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- Article No. 051603
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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