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1. Terahertz-induced nonlinear response in ZnTe

   https://doi.org/10.1364/OE.546261  

   Selz, Felix; Kölbel, Johanna; Paries, Felix; Freymann, Georg_von; Molter, Daniel; Mittleman, Daniel_M (February 2025, Optics Express)

   Measuring terahertz waveforms in terahertz spectroscopy often relies on electro-optic sampling employing a ZnTe crystal. Although the nonlinearities in such zincblende semiconductors induced by intense terahertz pulses have been studied at optical frequencies, a quantitative study of nonlinearities in the terahertz regime has not been reported. In this work, we investigate the nonlinear response of ZnTe in the terahertz frequency region utilizing time-resolved terahertz-pump terahertz-probe spectroscopy. We find that the interaction of two co-propagating terahertz pulses in ZnTe leads to a nonlinear polarization change which modifies the electro-optic response of the medium at terahertz frequencies. We present a model for this polarization that showcases the second-order nonlinear behavior. We also determine the magnitude of the third-order susceptibility in ZnTe at terahertz frequencies,χ⁽³⁾(ω_THz). These results clarify the interactions in ZnTe at terahertz frequencies, with implications for measurements of intense terahertz fields using electro-optic sampling. 

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2. Efficient on-chip terahertz generation and detection with GaN photoconductive emitters

   https://doi.org/10.1038/s41377-025-01870-6  

   Uzundal, Can_B; Feng, Qixin; Tang, Weichen; Hu, Chen; Sanborn, Collin; Yoon, Yoseob; Chen, Sudi; Ruan, Jiawei; Louie, Steven_G; Wang, Feng (June 2025, Light: Science & Applications)

   Abstract Photoconductive emitters for terahertz generation hold promise for highly efficient down-conversion of optical photons because it is not constrained by the Manley-Rowe relation. Existing terahertz photoconductive devices, however, faces limits in efficiency due to the semiconductor properties of commonly used GaAs materials. Here, we demonstrate that large bandgap semiconductor GaN, characterized by its high breakdown electric field, facilitates the highly efficient generation of terahertz waves in a coplanar stripline waveguide. Towards this goal, we investigated the excitonic contribution to the electro-optic response of GaN under static electric field both through experiments and first-principles calculations, revealing a robust excitonic Stark shift. Using this electro-optic effect, we developed a novel ultraviolet pump-probe spectroscopy for in-situ characterization of the terahertz electric field strength generated by the GaN photoconductive emitter. Our findings show that terahertz power scales quadratically with optical excitation power and applied electric field over a broad parameter range. We achieved an optical-to-terahertz conversion efficiency approaching 100% within the 0.03–1 THz bandwidth at the highest bias field (116 kV/cm) in our experiment. Further optimization of GaN-based terahertz generation devices could achieve even greater optical-to-terahertz conversion efficiencies. 

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3. Electro-plasmonic nanoantenna: A nonfluorescent optical probe for ultrasensitive label-free detection of electrophysiological signals

   https://doi.org/10.1126/sciadv.aav9786  

   Habib, Ahsan; Zhu, Xiangchao; Can, Uryan I.; McLanahan, Maverick L.; Zorlutuna, Pinar; Yanik, Ahmet A. (October 2019, Science Advances)

   Harnessing the unprecedented spatiotemporal resolution capability of light to detect electrophysiological signals has been the goal of scientists for nearly 50 years. Yet, progress toward that goal remains elusive due to lack of electro-optic translators that can efficiently convert electrical activity to high photon count optical signals. Here, we introduce an ultrasensitive and extremely bright nanoscale electric-field probe overcoming the low photon count limitations of existing optical field reporters. Our electro-plasmonic nanoantennas with drastically enhanced cross sections (~10 4 nm 2 compared to typical values of ~10 −2 nm 2 for voltage-sensitive fluorescence dyes and ~1 nm 2 for quantum dots) offer reliable detection of local electric-field dynamics with remarkably high sensitivities and signal–to–shot noise ratios (~60 to 220) from diffraction-limited spots. In our electro-optics experiments, we demonstrate high-temporal resolution electric-field measurements at kilohertz frequencies and achieved label-free optical recording of network-level electrogenic activity of cardiomyocyte cells with low-intensity light (11 mW/mm 2 ). 

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4. Modeling temperature, frequency, and strain effects on the linear electro-optic coefficients of ferroelectric oxides

   https://doi.org/10.1063/5.0090072  

   Liu, Yang; Ren, Guodong; Cao, Tengfei; Mishra, Rohan; Ravichandran, Jayakanth (April 2022, Journal of Applied Physics)

   An electro-optic modulator offers the function of modulating the propagation of light in a material with an electric field and enables a seamless connection between electronics-based computing and photonics-based communication. The search for materials with large electro-optic coefficients and low optical loss is critical to increase the efficiency and minimize the size of electro-optic devices. We present a semi-empirical method to compute the electro-optic coefficients of ferroelectric materials by combining first-principles density-functional theory calculations with Landau–Devonshire phenomenological modeling. We apply the method to study the electro-optic constants, also called Pockels coefficients, of three paradigmatic ferroelectric oxides: BaTiO 3 , LiNbO 3 , and LiTaO 3 . We present their temperature-, frequency-, and strain-dependent electro-optic tensors calculated using our method. The predicted electro-optic constants agree with the experimental results, where available, and provide benchmarks for experimental verification. 

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5. Electrically and magnetically switchable nonlinear photocurrent in РТ-symmetric magnetic topological quantum materials

   https://doi.org/10.1038/s41524-020-00462-9  

   Wang, Hua; Qian, Xiaofeng (December 2020, npj Computational Materials)

   Abstract Nonlinear photocurrent in time-reversal invariant noncentrosymmetric systems such as ferroelectric semimetals sparked tremendous interest of utilizing nonlinear optics to characterize condensed matter with exotic phases. Here we provide a microscopic theory of two types of second-order nonlinear direct photocurrents, magnetic shift photocurrent (MSC) and magnetic injection photocurrent (MIC), as the counterparts of normal shift current (NSC) and normal injection current (NIC) in time-reversal symmetry and inversion symmetry broken systems. We show that MSC is mainly governed by shift vector and interband Berry curvature, and MIC is dominated by absorption strength and asymmetry of the group velocity difference at time-reversed ±kpoints. Taking$${\cal{P}}{\cal{T}}$$ $PT$-symmetric magnetic topological quantum material bilayer antiferromagnetic (AFM) MnBi₂Te₄as an example, we predict the presence of large MIC in the terahertz (THz) frequency regime which can be switched between two AFM states with time-reversed spin orderings upon magnetic transition. In addition, external electric field breaks$${\cal{P}}{\cal{T}}$$ $PT$symmetry and enables large NSC response in bilayer AFM MnBi₂Te₄, which can be switched by external electric field. Remarkably, both MIC and NSC are highly tunable under varying electric field due to the field-induced large Rashba and Zeeman splitting, resulting in large nonlinear photocurrent response down to a few THz regime, suggesting bilayer AFM-zMnBi₂Te₄as a tunable platform with rich THz and magneto-optoelectronic applications. Our results reveal that nonlinear photocurrent responses governed by NSC, NIC, MSC, and MIC provide a powerful tool for deciphering magnetic structures and interactions which could be particularly fruitful for probing and understanding magnetic topological quantum materials. 

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