The electrochemical generation of vinyl carbocations from alkenyl boronic esters and boronates is reported. Using easy‐to‐handle nucleophilic fluoride reagents, these intermediates are trapped to form fully substituted vinyl fluorides. Mechanistic studies support the formation of dicoordinated carbocations through sequential single‐electron oxidation events. Notably, this electrochemical fluorination features fast reaction times and Lewis acid‐free conditions. This transformation provides a complementary method to access vinyl fluorides with simple fluoride salts such as TBAF.
Electrochemical Fluorination of Vinyl Boronates through Donor‐Stabilized Vinyl Carbocation Intermediates**
The electrochemical generation of vinyl carbocations from alkenyl boronic esters and boronates is reported. Using easy‐to‐handle nucleophilic fluoride reagents, these intermediates are trapped to form fully substituted vinyl fluorides. Mechanistic studies support the formation of dicoordinated carbocations through sequential single‐electron oxidation events. Notably, this electrochemical fluorination features fast reaction times and Lewis acid‐free conditions. This transformation provides a complementary method to access vinyl fluorides with simple fluoride salts such as TBAF.
more » « less- Award ID(s):
- 1764328
- NSF-PAR ID:
- 10368095
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Angewandte Chemie International Edition
- Volume:
- 61
- Issue:
- 12
- ISSN:
- 1433-7851
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract -
more » « less
Abstract The direct Friedel–Crafts‐type coupling and dedinitrogenation reactions of vinyldiazo compounds with aromatic compounds using a metal‐free strategy are described. This Brønsted acid catalyzed method is efficient for the formation of α‐diazo β‐carbocations (vinyldiazonium ions), vinyl carbocations, and allylic or homoallylic carbocation species via vinyldiazo compounds. By choosing suitable nucleophilic reagents to selectively capture these intermediates, both trisubstituted α,β‐unsaturated esters, β‐indole‐substituted diazo esters, and dienes are obtained with good to high yields and selectivity. Experimental insights implicate a reaction mechanism involving the selective protonation of vinyldiazo compounds and the subsequent release of dinitrogen to form vinyl cations that undergo intramolecular 1,3‐ and 1,4‐ hydride transfer processes as well as fragmentation.
-
more » « less
Abstract The direct Friedel–Crafts‐type coupling and dedinitrogenation reactions of vinyldiazo compounds with aromatic compounds using a metal‐free strategy are described. This Brønsted acid catalyzed method is efficient for the formation of α‐diazo β‐carbocations (vinyldiazonium ions), vinyl carbocations, and allylic or homoallylic carbocation species via vinyldiazo compounds. By choosing suitable nucleophilic reagents to selectively capture these intermediates, both trisubstituted α,β‐unsaturated esters, β‐indole‐substituted diazo esters, and dienes are obtained with good to high yields and selectivity. Experimental insights implicate a reaction mechanism involving the selective protonation of vinyldiazo compounds and the subsequent release of dinitrogen to form vinyl cations that undergo intramolecular 1,3‐ and 1,4‐ hydride transfer processes as well as fragmentation.
-
more » « less
Abstract This paper presents work on the heteroepitaxy of salts, specifically fluorides, on semiconductors and heteroepitaxy of semiconductors on salts. Fluorides layers are deposited on commercial Gallium Arsenide (GaAs) wafers followed by the heteroepitaxial growth of GaAs using metal‐organic chemical vapor deposition (MOCVD). The fluoride layers consist of 2 lattice‐engineered layers of alkaline‐earth compounds to match with GaAs, and are used to sandwich another alkaline‐earth compound with higher water‐solubility as a sacrificial layer. The triple fluoride layers enable liftoff of free‐standing semiconductor films which can be further transferred to desirable substrates. 2D‐X‐ray Diffraction (2D‐XRD) measurements confirm epitaxial growth of both the fluorides and the subsequently grown GaAs films. Single junction (SJ) solar cell devices based on thus prepared films show a power conversion efficiency (PCE) of 10.3% under 1 sun illumination. After the completion of device fabrications, the GaAs film is lifted off from the substrate by a novel water‐assisted epitaxial liftoff (H2O‐ELO) technique and transferred to a cheaper substrate. The original GaAs wafer is recycled and reused twice. Devices based on reused substrates show no significant degradation in performance. The semiconductor‐salt‐semiconductor scheme has great implications in high‐performance, flexible, and large‐area electronics.
