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Title: Review–On Epitaxial Electrodeposition of Co, Cu, and Ru for Interconnect Applications

Epitaxial electrodeposition of Co, Cu and Ru is compared and contrasted. The seed layer for electrodeposition of all three metals was an epitaxial Ru(0001) film that was deposited at an elevated temperature onto a sapphire(0001) substrate and annealed post deposition. The epitaxial orientation relationship of the electrodeposited film and the seed layer, the epitaxial misfit strain, the role of symmetry of the seed layer versus the electrodepositing layer is addressed. In addition, the impact of underpotential deposition on film nucleation, and the growth morphology of the films is discussed. It is shown that epitaxial electrodeposition of metallic films to thicknesses of tens of nanometers is readily achievable.

This paper 1189 was presented during the 241st Meeting of the Electrochemical Society, May 29–June 2, 2022.

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Journal of The Electrochemical Society
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Article No. 082517
The Electrochemical Society
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National Science Foundation
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