New parallel computing architectures based on neuromorphic computing are needed due to their advantages over conventional computation with regards to real‐time processing of unstructured sensory data such as image, video, or voice. However, developing artificial neuromorphic system remains a challenge due to the lack of electronic synaptic devices, which can mimic all the functions of biological synapses with low energy consumption. Here it is reported that two‐terminal organometal trihalide perovskite (OTP) synaptic devices can mimic the neuromorphic learning and remembering process. Various functions known in biological synapses are demonstrated in OTP synaptic devices including four forms of spike‐timing‐dependent plasticity (STDP), spike‐rate‐dependent plasticity (SRDP), short‐term plasticity (STP) and long‐term potentiation (LTP)), and learning‐experience behavior. The excellent photovoltaic property of the OTP devices also enables photo‐read synaptic functions. The perovskite synapse has the potential of low energy consumption of femto‐Joule/(100 nm)2per event, which is close to the energy consumption of biological synapses. The demonstration of energy‐efficient OTP synaptic devices opens a new plausible application of OTP materials into neuromorphic devices, which offer the high connectivity and high density required for biomimic computing.
For hardware artificial intelligence, the central task is to design and develop artificial synapses with needed characteristics. Here, the design and experimental demonstration of a van der Waals (vdW) photo‐ferroelectric synapse are reported. In the photo‐ferroelectric synapse, the synaptic memory is extracted by reading the photocurrent, and written or edited by electrical pulses. The semiconducting vdW organic‐inorganic halide perovskite ((R)‐(–)‐1‐cyclohexylethylammonium)PbI3(R‐CYHEAPbI3) photo‐ferroelectric serves as the model photo‐ferroelectric channel. Here, the vdW organic layer provides ferroelectric dipole and the PbI6octahedron is responsible for photon absorption and charge transport. The R‐CYHEAPbI3photo‐ferroelectric synapse show a writing/reading dynamics with >200 synaptic states, close to 103on/off ratio, and reasonable endurance and retention characteristics. With the experimentally measured weight dynamics (parallel reading through ferroelectric photovoltaic effect and writing by electrical pulses) of R‐CYHEAPbI3synapses, the feasibility of using a crossbar circuit to implement classic training and inference of hand‐written digits is presented. An image recognition accuracy of up to 90% is obtained. The demonstration of such a vdW photo‐ferroelectric synapse opens a window in the design of advanced devices for artificial intelligence.
more » « less- Award ID(s):
- 1916652
- NSF-PAR ID:
- 10373738
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 8
- Issue:
- 10
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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