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1. Discovery of extreme, roughly daily superflares on the recurrent nova V2487 Oph

   https://doi.org/10.1093/mnras/stac443  

   Schaefer, Bradley E. ; Pagnotta, Ashley ; Zoppelt, Seth ( March 2022 , Monthly Notices of the Royal Astronomical Society)

   V2487 Oph is a recurrent nova with detected eruptions in 1900 and 1998. Startlingly, V2487 Oph shows flares, called ‘Superflares’, with up to 1.10 mag amplitude, fast rises of under one-minute, always with an initial impulsive spike followed by a roughly exponential tail, typically one-hour durations, and with random event times averaging once-per-day. The typical flare energy E is over 1038 erg, while the yearly energy budget is 1041 erg. V2487 Oph Superflares obey three relations; the number distribution of flare energies scales as E−2.34 ± 0.35, the waiting time from one flare to the next is proportional to E of the first event, and flare durations scale as E0.44 ± 0.03. Scenarios involving gravitational energy and nuclear energy fail to satisfy the three relations. The magnetic energy scenario, however, can explain all three relations. This scenario has magnetic field lines above the disc being twisted and amplified by the motions of their footprints, with magnetic reconnection releasing energy that comes out as Superflare light. This exact mechanism is already well known to occur in white light solar flares, in ordinary M-type flare stars, and in the many Superflare stars observed all across the H-R diagram. Superflares on Superflare stars have rise times,more »light-curve shapes, and durations that are very similar to those on V2487 Oph. So we conclude that the V2487 Oph Superflares are caused by large-scale magnetic reconnection. V2487 Oph is now the most extreme Superflare star, exhibiting the largest known flare energy (1.6 × 1039 erg) and the fastest occurrence rate.

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2. Multifrequency Microwave Imaging of Weak Transients from the Quiet Solar Corona

   https://doi.org/10.3847/1538-4357/acc838  

   Mondal, Surajit ; Chen, Bin ; Yu, Sijie ( May 2023 , The Astrophysical Journal)

   Abstract Understanding the dynamics of the quiet solar corona is important for answering key questions including the coronal heating problem. Multiple studies have suggested small-scale magnetic-reconnection events may play a crucial role. These reconnection events are expected to involve acceleration of electrons to suprathermal energies, which can then produce nonthermal observational signatures. However, due to the paucity of sensitive high-fidelity observations capable of probing these nonthermal signatures, most studies were unable to quantify their nonthermal nature. Here we use joint radio observations from the Very Large Array (VLA) and the Expanded Owens Valley Solar Array (EOVSA) to detect transient emissions from the quiet solar corona in the microwave (GHz) domain. While similar transients have been reported in the past, their nonthermal nature could not be adequately quantified due to the unavailability of broadband observations. Using a much larger bandwidth available now with the VLA and EOVSA, in this study, we are able to quantify the nonthermal energy associated with two of these transients. We find that the total nonthermal energy associated with some of these transients can be comparable to or even larger than the total thermal energy of a nanoflare, which underpins the importance of nonthermal energy in themore »total coronal energy budget.« less
3. Exact Calculation of Nonideal Fields Demonstrates Their Dominance of Injection in Relativistic Reconnection

   https://doi.org/10.3847/2041-8213/acdb60  

   Totorica, Samuel R. ; Zenitani, Seiji ; Matsukiyo, Shuichi ; Machida, Mami ; Sekiguchi, Kazuhiro ; Bhattacharjee, Amitava ( July 2023 , The Astrophysical Journal Letters)

   Magnetic reconnection is an important source of energetic particles in systems ranging from astrophysics to the laboratory. The large separation of spatiotemporal scales involved makes it critical to determine the minimum physical model containing the necessary physics for modeling particle acceleration. By resolving the energy gain from ideal and nonideal magnetohydrodynamic electric fields self-consistently in kinetic particle-in-cell simulations of reconnection, we conclusively show the dominant role of the nonideal field for the early stage of energization known as injection. The importance of the nonideal field increases with magnetization, guide field, and in three dimensions, indicating its general importance for reconnection in natural astrophysical systems. We obtain the statistical properties of the injection process from the simulations, paving the way for the development of extended MHD models capable of accurately modeling particle acceleration in large-scale systems. The novel analysis method developed in this study can be applied broadly to give new insight into a wide range of processes in plasma physics.
4. Intracluster Magnetic Filaments and an Encounter with a Radio Jet

   https://doi.org/10.3847/1538-4357/ac7c76  

   Rudnick, L. ; Brüggen, M. ; Brunetti, G. ; Cotton, W. D. ; Forman, W. ; Jones, T. W. ; Nolting, C. ; Schellenberger, G. ; van Weeren, R. ( August 2022 , The Astrophysical Journal)

   Thin synchrotron-emitting filaments are increasingly seen in the intracluster medium (ICM). We present the first example of a direct interaction between a magnetic filament, a radio jet, and a dense ICM clump in the poor cluster A194. This enables the first exploration of the dynamics and possible histories of magnetic fields and cosmic rays in such filaments. Our observations are from the MeerKAT Galaxy Cluster Legacy Survey and the LOFAR Two-Meter Sky Survey. Prominent 220 kpc long filaments extend east of radio galaxy 3C40B, with very faint extensions to 300 kpc, and show signs of interaction with its northern jet. They curve around a bend in the jet and intersect the jet in Faraday depth space. The X-ray surface brightness drops across the filaments; this suggests that the relativistic particles and fields contribute significantly to the pressure balance and evacuate the thermal plasma in a ∼35 kpc cylinder. We explore whether the relativistic electrons could have streamed along the filaments from 3C40B, and present a plausible alternative whereby magnetized filaments are (a) generated by shear motions in the large-scale, post-merger ICM flow, (b) stretched by interactions with the jet and flows in the ICM, amplifying the embedded magnetic fields,more »and (c) perfused by re-energized relativistic electrons through betatron-type acceleration or diffusion of turbulently accelerated ICM cosmic-ray electrons. We use the Faraday depth measurements to reconstruct some of the 3D structures of the filameGnts and of 3C40A and B.

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5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K.more »The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less