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   Bhuiyan, A F ; Feng, Zixuan ; Johnson, Jared M. ; Huang, Hsien-Lien ; Hwang, Jinwoo ; Zhao, Hongping ( December 2020 , Applied Physics Letters)

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4. MOCVD epitaxy of β -(Al x Ga 1−x ) 2 O 3 thin films on (010) Ga 2 O 3 substrates and N-type doping

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5. Schottky diode characteristics on high-growth rate LPCVD β -Ga 2 O 3 films on (010) and (001) Ga 2 O 3 substrates

   https://doi.org/10.1063/5.0083659  

   Saha, Sudipto ; Meng, Lingyu ; Feng, Zixuan ; Anhar Uddin Bhuiyan, A. F. M. ; Zhao, Hongping ; Singisetti, Uttam ( March 2022 , Applied Physics Letters)

   High crystalline quality thick β-Ga₂O₃drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial β-Ga₂O₃thin films grown on Sn-doped (010) and (001) β-Ga₂O₃substrates by LPCVD with a fast growth rate varying from 13 to 21  μm/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density–voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage are studied. Temperature dependence (25–250 °C) of the ideality factor, barrier height, and specific on-resistance is also analyzed from the J–V–T characteristics of the fabricated Schottky diodes.

    

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