Reactions of Ge with S vapor, of interest as a potential approach for forming thin passivation layers on Ge surfaces, have been studied by photoelectron spectroscopy and Raman spectroscopy. Exposure of Ge(100) and Ge(111) to S drives the formation of Ge sulfide near-surface layers. At low temperatures, the reaction products comprise a thin GeS interlayer terminated by near-surface GeS 2 . Above 400 °C, exposure to sulfur gives rise to single-phase GeS 2 layers whose thickness increases with temperature. Arrhenius analysis of the GeS 2 thickness yields an activation energy (0.63 ± 0.08) eV, close to the barrier that controls Ge oxidation by O radicals. XPS measurements after extended ambient exposure show a stable, ultrathin near-surface GeS 2 without significant oxidation, indicating that Ge–sulfides may provide an effective surface passivation for Ge surfaces.
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Nanostructured copper sulfide thin film via a spatial successive ionic layer adsorption and reaction process showing significant surface-enhanced infrared absorption of CO 2
The infrared (IR) gas sensing technique is excellent for CO 2 gas detection systems that require high accuracy and safety standard; however, there is a significant barrier to its application due to its high cost and difficulty in miniaturization. CO 2 sensors that are functional within near- or short-wavelength IR have the potential to reduce this barrier. In this work, a highly sensitive plasmonic material based on nanostructured covellite copper sulfide (CuS), which exhibits desired localized surface plasmon resonance for surface-enhanced IR absorption (SEIRA) throughout near- and mid-IR ranges, was investigated. We prepared CuS thin films facilely in an additive manner based on a spatial successive ionic layer adsorption and reaction process at room temperature. The resulting CuS thin film possesses a structure consisting of hexagonal nanoflakes, and demonstrates significant SEIRA for 100 ppm CO 2 with an enhancement factor of 10 4 .
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- Award ID(s):
- 1707506
- PAR ID:
- 10380155
- Date Published:
- Journal Name:
- Journal of Materials Chemistry C
- Volume:
- 8
- Issue:
- 9
- ISSN:
- 2050-7526
- Page Range / eLocation ID:
- 3069 to 3078
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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