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1. Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

   https://doi.org/10.1364/AO.381246  

   Ahmad, Faiz ; Lakhtakia, Akhlesh ; Monk, Peter B. ( January 2020 , Applied Optics)

   An optoelectronic optimization was carried out for an${\mathrm{A}\mathrm{l}}_{\mathrm{\xi <\#comment/>}}{\mathrm{G}\mathrm{a}}_{1-<\#comment/>\mathrm{\xi <\#comment/>}}\mathrm{A}\mathrm{s}$(AlGaAs) solar cell containing (i) an$n$-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick$n$-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.

    

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2. Utilizing adaptive optics to mitigate intra-modal-group power coupling of graded-index few-mode fiber in a 200-Gbit/s mode-division-multiplexed link

   https://doi.org/10.1364/OL.394307  

   Zhang, Runzhou ; Song, Hao ; Song, Haoqian ; Zhao, Zhe ; Milione, Giovanni ; Pang, Kai ; Du, Jing ; Li, Long ; Zou, Kaiheng ; Zhou, Huibin ; et al ( June 2020 , Optics Letters)

   We experimentally demonstrate the utilization of adaptive optics (AO) to mitigate intra-group power coupling among linearly polarized (LP) modes in a graded-index few-mode fiber (GI FMF). Generally, in this fiber, the coupling between degenerate modes inside a modal group tends to be stronger than between modes belonging to different groups. In our approach, the coupling inside the${\mathrm{L}\mathrm{P}}_{11}$group can be represented by a combination of orbital-angular-momentum (OAM) modes, such that reducing power coupling in OAM set tends to indicate the capability to reduce the coupling inside the${\mathrm{L}\mathrm{P}}_{11}$group. We employ two output OAM modes$l=+1$and$l=-<\#comment/>1$as resultant linear combinations of degenerate${\mathrm{L}\mathrm{P}}_{11\mathrm{a}}$and${\mathrm{L}\mathrm{P}}_{11\mathrm{b}}$modes inside the${\mathrm{L}\mathrm{P}}_{11}$group of a$\sim <\#comment/>0.6\text{-}\mathrm{k}\mathrm{m}$GI FMF. The power coupling is mitigated by shaping the amplitude and phase of the distorted OAM modes. Each OAM mode carries an independent 20-, 40-, or 100-Gbit/s quadrature-phase-shift-keying data stream. We measure the transmission matrix (TM) in the OAM basis within${\mathrm{L}\mathrm{P}}_{11}$group, which is a subset of the full LP TM of the FMF-based system. An inverse TM is subsequently implemented before the receiver by a spatial light modulator to mitigate the intra-modal-group power coupling. With AO mitigation, the experimental results for$l=+1$and$l=-<\#comment/>1$modes show, respectively, that (i) intra-modal-group crosstalk is reduced by$><\#comment/>5.8\mathrm{d}\mathrm{B}$and$><\#comment/>5.6\mathrm{d}\mathrm{B}$and (ii) near-error-free bit-error-rate performance is achieved with a penalty of$\sim <\#comment/>0.6\mathrm{d}\mathrm{B}$and$\sim <\#comment/>3.8\mathrm{d}\mathrm{B}$, respectively.

    

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3. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

   https://doi.org/10.1364/OL.400917  

   Velpula, Ravi Teja ; Jain, Barsha ; Velpula, Swetha ; Nguyen, Hoang-Duy ; Nguyen, Hieu Pham Trung ( September 2020 , Optics Letters)

   In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic${\mathrm{A}\mathrm{l}}_x{\mathrm{G}\mathrm{a}}_{(1-<\#comment/>x)}\mathrm{N}$strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by$\sim <\#comment/>220\mathrm{\%<\#comment/>}$, reduces electron leakage by$\sim <\#comment/>11$times, and enhances optical power by$\sim <\#comment/>225\mathrm{\%<\#comment/>}$at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of$\sim <\#comment/>61.5\mathrm{\%<\#comment/>}$which is$\sim <\#comment/>72\mathrm{\%<\#comment/>}$higher, and IQE droop is$\sim <\#comment/>12.4\mathrm{\%<\#comment/>}$, which is$\sim <\#comment/>333\mathrm{\%<\#comment/>}$less compared to the conventional AlGaN EBL LED structure at$\sim <\#comment/>284.5\mathrm{n}\mathrm{m}$wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters.

    

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4. Hybrid electro-optic modulator combining silicon photonic slot waveguides with high-k radio-frequency slotlines

   https://doi.org/10.1364/OPTICA.411161  

   Ummethala, Sandeep ; Kemal, Juned N. ; Alam, Ahmed S. ; Lauermann, Matthias ; Kuzmin, Artem ; Kutuvantavida, Yasar ; Nandam, Sree H. ; Hahn, Lothar ; Elder, Delwin L. ; Dalton, Larry R. ; et al ( April 2021 , Optica)

   Electro-optic (EO) modulators rely on the interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced using dielectric slot–waveguide structures that exploit a field discontinuity at the interface between a high-index waveguide core and the low-index EO cladding. In contrast to this, the electrical signal is usually applied through conductive regions in the direct vicinity of the optical waveguide. To avoid excessive optical loss, the conductivity of these regions is maintained at a moderate level, thus leading to inherentRClimitations of the modulation bandwidth. In this paper, we show that these limitations can be overcome by extending the slot–waveguide concept to the modulating radio-frequency (RF) signal. Our device combines an RF slotline that relies on$\mathrm{B}\mathrm{a}\mathrm{T}\mathrm{i}{\mathrm{O}}_3$as a high-k dielectric material with a conventional silicon photonic slot waveguide and a highly efficient organic EO cladding material. In a proof-of-concept experiment, we demonstrate a 1 mm long Mach–Zehnder modulator that offers a 3 dB bandwidth of 76 GHz and a 6 dB bandwidth of 110 GHz along with a small$\mathrm{\pi <\#comment/>}$voltage of 1.3 V ($U_{\mathrm{\pi <\#comment/>}}L=1.3\mathrm{V}\mathrm{m}\mathrm{m}$). We further demonstrate the viability of the device in a data-transmission experiment using four-state pulse-amplitude modulation (PAM4) at line rates up to 200 Gbit/s. Our first-generation devices leave vast room for further improvement and may open an attractive route towards highly efficient silicon photonic modulators that combine sub-1 mm device lengths with sub-1 V drive voltages and modulation bandwidths of more than 100 GHz.

    

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5. Mid-IR spectroscopy of Er 3+ doped low-phonon CsCdCl 3 and CsPbCl 3 crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei Ei ; Fleischman, Zackery D. ; McKay, Jason ; Hommerich, Uwe ; Kabir, Al Amin ; Riggins, Jazmine ; Trivedi, Sudhir ; Dubinskii, Mark ( September 2022 , Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at$\sim <\#comment/>800\mathrm{n}\mathrm{m}$and$\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at$\sim <\#comment/>1.55$,$\sim <\#comment/>2.75$,$\sim <\#comment/>3.5$, and$\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of$\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of$\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be$\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and$\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed.

    

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