Buddhanoy, Matchima, Sakib, Sadman, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Milenkovic, Aleksandar, and Ray, Biswajit. New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory. Retrieved from https://par.nsf.gov/biblio/10381596. IEEE Transactions on Device and Materials Reliability 22.3 Web. doi:10.1109/TDMR.2022.3189673.

Buddhanoy, Matchima, Sakib, Sadman, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Milenkovic, Aleksandar, & Ray, Biswajit. New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory. IEEE Transactions on Device and Materials Reliability, 22 (3). Retrieved from https://par.nsf.gov/biblio/10381596. https://doi.org/10.1109/TDMR.2022.3189673

Buddhanoy, Matchima, Sakib, Sadman, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Milenkovic, Aleksandar, and Ray, Biswajit. "New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory". IEEE Transactions on Device and Materials Reliability 22 (3). Country unknown/Code not available. https://doi.org/10.1109/TDMR.2022.3189673. https://par.nsf.gov/biblio/10381596.

@article{osti_10381596,
place = {Country unknown/Code not available}, title = {New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory}, url = {https://par.nsf.gov/biblio/10381596}, DOI = {10.1109/TDMR.2022.3189673}, abstractNote = {}, journal = {IEEE Transactions on Device and Materials Reliability}, volume = {22}, number = {3}, author = {Buddhanoy, Matchima and Sakib, Sadman and Surendranathan, Umeshwarnath and Wasiolek, Maryla and Hattar, Khalid and Milenkovic, Aleksandar and Ray, Biswajit}, }