Abstract Dry deposition is the second largest tropospheric ozone (O3) sink and occurs through stomatal and nonstomatal pathways. Current O3uptake predictions are limited by the simplistic big‐leaf schemes commonly used in chemical transport models (CTMs) to parameterize deposition. Such schemes fail to reproduce observed O3fluxes over terrestrial ecosystems, highlighting the need for more realistic treatment of surface‐atmosphere exchange in CTMs. We address this need by linking a resolved canopy model (1D Multi‐Layer Canopy CHemistry and Exchange Model, MLC‐CHEM) to the GEOS‐Chem CTM and use this new framework to simulate O3fluxes over three north temperate forests. We compare results with in situ measurements from four field studies and with standalone, observationally constrained MLC‐CHEM runs to test current knowledge of O3deposition and its drivers. We show that GEOS‐Chem overpredicts observed O3fluxes across all four studies by up to 2×, whereas the resolved‐canopy models capture observed diel profiles of O3deposition and in‐canopy concentrations to within 10%. Relative humidity and solar irradiance are strong O3flux drivers over these forests, and uncertainties in those fields provide the largest remaining source of model deposition biases. Flux partitioning analysis shows that: (a) nonstomatal loss accounts for 60% of O3deposition on average; (b) in‐canopy chemistry makes only a small contribution to total O3fluxes; and (c) the CTM big‐leaf treatment overestimates O3‐driven stomatal loss and plant phytotoxicity in these temperate forests by up to 7×. Results motivate the application of fully online vertically explicit canopy schemes in CTMs for improved O3predictions. 
                        more » 
                        « less   
                    
                            
                            Simultaneous Measurements of O 3 and HCOOH Vertical Fluxes Indicate Rapid In‐Canopy Terpene Chemistry Enhances O 3 Removal Over Mixed Temperate Forests
                        
                    
    
            Abstract Dry deposition, the second largest removal process of ozone (O3) in the troposphere, plays a role in controlling the natural variability of surface O3concentrations. Terrestrial ecosystems remove O3either through stomatal uptake or nonstomatal processes. In chemical transport models, nonstomatal pathways are roughly constrained and may not correctly capture total O3loss. To address this, the first simultaneous eddy covariance measurements of O3and formic acid (HCOOH), a tracer of in‐canopy oxidation of biogenic terpenes, were made in a mixed temperate forest in Northern Wisconsin. Daytime maximum O3deposition velocities,vd(O3), ranged between 0.5 and 1.2 cm s−1. Comparison of observedvd(O3) with observationally constrained estimates of stomatal uptake and parameterized estimates of cuticular and soil uptake reveal a large (10%–90%) residual nonstomatal contribution tovd(O3). The residual downward flux of O3was well correlated with measurements of HCOOH upward flux, suggesting unaccounted for in‐canopy gas‐phase chemistry. 
        more » 
        « less   
        
    
                            - Award ID(s):
- 1822420
- PAR ID:
- 10384657
- Publisher / Repository:
- DOI PREFIX: 10.1029
- Date Published:
- Journal Name:
- Geophysical Research Letters
- Volume:
- 48
- Issue:
- 3
- ISSN:
- 0094-8276
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
- 
            
- 
            Abstract High quality dielectric‐semiconductor interfaces are critical for reliable high‐performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3on β‐Ga2O3as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al2O3is performed in the same reactor as Ga2O3using trimethylaluminum and O2as precursors without breaking the vacuum at a growth temperature of 600 °C. The fast and slow near interface traps at the Al2O3/β‐Ga2O3interface are identified and quantified using stressed capacitance–voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (Dit) are measured using ultraviolet‐assisted CV technique. The average Ditfor the MOSCAP is determined to be 6.4×1011cm−2eV−1. The conduction band offset of the Al2O3/ Ga2O3interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al2O3/Ga2O3interface. The current–voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV cm−1. This in situ Al2O3dielectric on β‐Ga2O3with improved dielectric properties can enable Ga2O3‐based high‐performance devices.more » « less
- 
            Abstract Sources of neurotoxic mercury in forests are dominated by atmospheric gaseous elemental mercury (GEM) deposition, but a dearth of direct GEM exchange measurements causes major uncertainties about processes that determine GEM sinks. Here we present three years of forest-level GEM deposition measurements in a coniferous forest and a deciduous forest in northeastern USA, along with flux partitioning into canopy and forest floor contributions. Annual GEM deposition is 13.4 ± 0.80 μg m−2(coniferous forest) and 25.1 ± 2.4 μg m−2(deciduous forest) dominating mercury inputs (62 and 76% of total deposition). GEM uptake dominates in daytime during active vegetation periods and correlates with CO2assimilation, attributable to plant stomatal uptake of mercury. Non-stomatal GEM deposition occurs in the coniferous canopy during nights and to the forest floor in the deciduous forest and accounts for 24 and 39% of GEM deposition, respectively. Our study shows that GEM deposition includes various pathways and is highly ecosystem-specific, which complicates global constraints of terrestrial GEM sinks.more » « less
- 
            α-Ga2O3has the corundum structure analogous to that of α-Al2O3. The bandgap energy of α-Ga2O3is 5.3 eV and is greater than that of β-Ga2O3, making the α-phase attractive for devices that benefit from its wider bandgap. The O–H and O–D centers produced by the implantation of H+and D+into α-Ga2O3have been studied by infrared spectroscopy and complementary theory. An O–H line at 3269 cm−1is assigned to H complexed with a Ga vacancy (VGa), similar to the case of H trapped by an Al vacancy (VAl) in α-Al2O3. The isolated VGaand VAldefects in α-Ga2O3and α-Al2O3are found by theory to have a “shifted” vacancy-interstitial-vacancy equilibrium configuration, similar to VGain β-Ga2O3, which also has shifted structures. However, the addition of H causes the complex with H trapped at an unshifted vacancy to have the lowest energy in both α-Ga2O3and α-Al2O3.more » « less
- 
            Abstract Discovery of new materials with enhanced optical properties in the visible and UV‐C range can impact applications in lasers, nonlinear optics, and quantum optics. Here, the optical floating zone growth of a family of rare earth borates,RBa3(B3O6)3(R= Nd, Sm, Tb, Dy, and Er), with promising linear and nonlinear optical (NLO) properties is reported. Although previously identified to be centrosymmetric, the X‐ray analysis combined with optical second harmonic generation (SHG) assigns the noncentrosymmetricPspace group to these crystals. Characterization of linear optical properties reveals a direct bandgap of ≈5.61–5.72 eV and strong photoluminescence in both the visible and mid‐IR regions. Anisotropic linear and nonlinear optical characterization reveals both Type‐I and Type‐II SHG phase matchability, with the highest effective phase‐matched SHG coefficient of 1.2 pm V−1at 800‐nm fundamental wavelength (for DyBa3(B3O6)3), comparable to β‐BaB2O4(phase‐matchedd22≈ 1.9 pm V−1). Laser‐induced surface damage threshold for these environmentally stable crystals is 650–900 GW cm−2, which is four to five times higher than that of β‐BaB2O4, thus providing an opportunity to pump with significantly higher power to generate about six to seven times stronger SHG light. Since the SHG arises from disorder on the Ba‐site, significantly larger SHG coefficients may be realized by “poling” the crystals to align the Ba displacements. These properties motivate further development of this crystal family for laser and wide bandgap NLO applications.more » « less
 An official website of the United States government
An official website of the United States government 
				
			 
					 
					
