Abstract Field-free switching of perpendicular magnetization has been observed in an epitaxial L1$$_1$$-ordered CoPt/CuPt bilayer and attributed to spin-orbit torque (SOT) arising from the crystallographic $3m$ point group of the interface. Using a first-principles nonequilibrium Green’s function formalism combined with the Anderson disorder model, we calculate the angular dependence of the SOT in a CoPt/CuPt bilayer and find that the magnitude of the $3m$$ SOT is about 20\% of the conventional dampinglike SOT. We further study the magnetization dynamics in perpendicularly magnetized films in the presence of $$3m$ SOT and Dzyaloshinskii-Moriya interaction, using the equations of motion for domain wall dynamics and micromagnetic simulations. We find that for systems with strong interfacial DMI characterized by the N'eel character of domain walls, a very large current density is required to achieve deterministic switching because reorientation of the magnetization inside the domain wall is necessary to induce the switching asymmetry. For thicker films with relatively weak interfacial DMI and the Bloch character of domain walls the deterministic switching with much smaller currents is possible, which agrees with recent experimental findings. 
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                            Dynamic Bloch Chirality and Enhanced Velocities from Spin-Orbit Torque Driven Domain Wall Motion in Thick Magnetic Films
                        
                    
    
            Spin-orbit torque (SOT) driven domain wall motion has attracted significant attention as the basis for a variety of spintronic devices due to its potential use as a high speed, low power means to manipulate the magnetic state of an object. While most previous attention has focused on ultrathin films wherein the material thickness is significantly less than the magnetic exchange length, recent reports have suggested unique dynamics may be achieved in intermediate and high thickness films. We used micromagnetic modelling to explore the role of the vertically non-uniform spin textures associated with the domain wall in nanowires of varying thickness on SOT driven domain wall motion. We found large velocity asymmetries between Bloch chiralities near the current density required for reversal of the Bloch component of the magnetization and linked these asymmetries to a gradual reorientation of the domain wall structure which drives a non-negligible, chiral Néel component of the domain wall. We further explored the influence of saturation magnetization, film thickness, the Dzyaloshinskii-Moriya interaction, and in-plane fields on domain wall dynamics. These results provide a framework for the development of SOT based devices based on domain wall motion in nanowires beyond the ultrathin film limit. 
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                            - Award ID(s):
- 2138271
- PAR ID:
- 10385215
- Date Published:
- Journal Name:
- Magnetochemistry
- Volume:
- 8
- Issue:
- 10
- ISSN:
- 2312-7481
- Page Range / eLocation ID:
- 119
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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