Temperature‐dependent thermal properties of phase‐pure polycrystalline ternary chalcogenides Cu4Bi4S9and Cu4Bi4Se9are reported. The structure and bonding in these materials result in very low thermal conductivity values (<0.8 W m−1 K−1at room temperature) for both materials. The lattice contribution, Debye temperatures, and Sommerfeld coefficient are obtained from low‐temperature heat capacity data that also indicate very small electronic contributions to the heat capacity for these materials. This study aids in the identification of new nontoxic, earth‐abundant resistive ternary chalcogenide materials with low thermal conductivity for potential thermal barrier coating and rewriteable storage applications.
- Award ID(s):
- 2144328
- NSF-PAR ID:
- 10391516
- Date Published:
- Journal Name:
- Micromachines
- Volume:
- 13
- Issue:
- 11
- ISSN:
- 2072-666X
- Page Range / eLocation ID:
- 1994
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Efficient heat dissipation in batteries is important for thermal management against thermal runaway and chemical instability at elevated temperatures. Nevertheless, thermal transport processes in battery materials have not been well understood especially considering their complicated microstructures. In this study, lattice thermal transport in lithium cobalt oxide (LiCoO 2 ), a popular cathode material for lithium ion batteries, is investigated via molecular dynamics-based approaches and thermal resistance models. A LiCoO 2 single-crystal is shown to have thermal conductivities in the order of 100 W m −1 K −1 with strong anisotropy, temperature dependence, and size effects. By comparison, polycrystalline LiCoO 2 is more isotropic with much lower thermal conductivities. This difference is caused by random grain orientations, the thermal resistance of grain boundaries, and size-dependent intra-grain thermal conductivities that are unique to polycrystals. The grain boundary thermal conductance is calculated to be in the range of 7.16–25.21 GW m −2 K −1 . The size effects of the intra-grain thermal conductivities are described by two empirical equations. Considering all of these effects, two thermal resistance models are developed to predict the thermal conductivity of polycrystalline LiCoO 2 . The two models predict a consistent thermal conductivity–grain size relationship that agrees well with molecular dynamics simulation results. The insights revealed by this study may facilitate future efforts on battery materials design for improved thermal management.more » « less
-
The thermal properties of Ba 3 Cu 2 Sn 3 Se 10 were investigated by measurement of the thermal conductivity and heat capacity. The chemical bonding in this diamagnetic material was investigated using structural data from Rietveld refinement and calculated electron localization. This quaternary chalcogenide is monoclinic ( P 2 1 / c ), has a large unit cell with 72 atoms in the primitive cell, and a high local coordination environment. The Debye temperature (162 K) and average speed of sound (1666 m s −1 ) are relatively low with a very small electronic contribution to the heat capacity. Ultralow thermal conductivity (0.46 W m −1 K −1 at room temperature) is attributed to the relatively weak chemical bonding and intrinsic anharmonicity, in addition to a large unit cell. This work is part of the continuing effort to explore quaternary chalcogenides with intrinsically low thermal conductivity and identify the features that result in a low thermal conductivity.more » « less
-
Abstract The lattice thermal conductivity (κph) of metals and semimetals is limited by phonon‐phonon scattering at high temperatures and by electron‐phonon scattering at low temperatures or in some systems with weak phonon‐phonon scattering. Following the demonstration of a phonon band engineering approach to achieve an unusually high κphin semiconducting cubic‐boron arsenide (c‐BAs), recent theories have predicted ultrahigh κphof the semimetal tantalum nitride in the θ‐phase (θ‐TaN) with hexagonal tungsten carbide (WC) structure due to the combination of a small electron density of states near the Fermi level and a large phonon band gap, which suppress electron‐phonon and three‐phonon scattering, respectively. Here, measurements on the thermal and electrical transport properties of polycrystalline θ‐TaN converted from the ε phase via high‐pressure synthesis are reported. The measured thermal conductivity of the θ‐TaN samples shows weak temperature dependence above 200 K and reaches up to 90 Wm−1K−1, one order of magnitude higher than values reported for polycrystalline ε‐TaN and δ‐TaN thin films. These results agree with theoretical calculations that account for phonon scattering by 100 nm‐level grains and suggest κphincrease above the 249 Wm−1K−1value predicted for single‐crystal WC when the grain size of θ‐TaN is increased above 400 nm.
-
Abstract An emerging chalcogenide perovskite, CaZrSe3, holds promise for energy conversion applications given its notable optical and electrical properties. However, knowledge of its thermal properties is extremely important, e.g. for potential thermoelectric applications, and has not been previously reported in detail. In this work, we examine and explain the lattice thermal transport mechanisms in CaZrSe3using density functional theory and Boltzmann transport calculations. We find the mean relaxation time to be extremely short corroborating an enhanced phonon–phonon scattering that annihilates phonon modes, and lowers thermal conductivity. In addition, strong anharmonicity in the perovskite crystal represented by the Grüneisen parameter predictions, and low phonon number density for the acoustic modes, results in the lattice thermal conductivity to be limited to 1.17 W m−1 K−1. The average phonon mean free path in the bulk CaZrSe3sample (
N → ∞) is 138.1 nm and nanostructuring CaZrSe3sample to ~10 nm diminishes the thermal conductivity to 0.23 W m−1 K−1. We also find that p-type doping yields higher predictions of thermoelectric figure of merit than n-type doping, and values ofZT ~0.95–1 are found for hole concentrations in the range 1016–1017 cm−3and temperature between 600 and 700 K.