Zhang, Ruizhe, Liu, Jingcun, Li, Qiang, Pidaparthi, Subhash, Edwards, Andrew, Drowley, Cliff, and Zhang, Yuhao. Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET. Retrieved from https://par.nsf.gov/biblio/10396723. IEEE Transactions on Power Electronics 37.6 Web. doi:10.1109/TPEL.2021.3138451.

Zhang, Ruizhe, Liu, Jingcun, Li, Qiang, Pidaparthi, Subhash, Edwards, Andrew, Drowley, Cliff, & Zhang, Yuhao. Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET. IEEE Transactions on Power Electronics, 37 (6). Retrieved from https://par.nsf.gov/biblio/10396723. https://doi.org/10.1109/TPEL.2021.3138451

Zhang, Ruizhe, Liu, Jingcun, Li, Qiang, Pidaparthi, Subhash, Edwards, Andrew, Drowley, Cliff, and Zhang, Yuhao. "Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET". IEEE Transactions on Power Electronics 37 (6). Country unknown/Code not available. https://doi.org/10.1109/TPEL.2021.3138451. https://par.nsf.gov/biblio/10396723.

@article{osti_10396723,
place = {Country unknown/Code not available}, title = {Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET}, url = {https://par.nsf.gov/biblio/10396723}, DOI = {10.1109/TPEL.2021.3138451}, abstractNote = {}, journal = {IEEE Transactions on Power Electronics}, volume = {37}, number = {6}, author = {Zhang, Ruizhe and Liu, Jingcun and Li, Qiang and Pidaparthi, Subhash and Edwards, Andrew and Drowley, Cliff and Zhang, Yuhao}, }