Ma, Yunwei, Xiao, Ming, Du, Zhonghao, Wang, Lei, Carlson, Eric, Guido, Louis, Wang, Han, Wang, Lai, Luo, Yi, and Zhang, Yuhao. Activating Thick Buried p-GaN for Device Applications. Retrieved from https://par.nsf.gov/biblio/10396734. IEEE Transactions on Electron Devices 69.8 Web. doi:10.1109/TED.2022.3186652.

Ma, Yunwei, Xiao, Ming, Du, Zhonghao, Wang, Lei, Carlson, Eric, Guido, Louis, Wang, Han, Wang, Lai, Luo, Yi, & Zhang, Yuhao. Activating Thick Buried p-GaN for Device Applications. IEEE Transactions on Electron Devices, 69 (8). Retrieved from https://par.nsf.gov/biblio/10396734. https://doi.org/10.1109/TED.2022.3186652

Ma, Yunwei, Xiao, Ming, Du, Zhonghao, Wang, Lei, Carlson, Eric, Guido, Louis, Wang, Han, Wang, Lai, Luo, Yi, and Zhang, Yuhao. "Activating Thick Buried p-GaN for Device Applications". IEEE Transactions on Electron Devices 69 (8). Country unknown/Code not available. https://doi.org/10.1109/TED.2022.3186652. https://par.nsf.gov/biblio/10396734.

@article{osti_10396734,
place = {Country unknown/Code not available}, title = {Activating Thick Buried p-GaN for Device Applications}, url = {https://par.nsf.gov/biblio/10396734}, DOI = {10.1109/TED.2022.3186652}, abstractNote = {}, journal = {IEEE Transactions on Electron Devices}, volume = {69}, number = {8}, author = {Ma, Yunwei and Xiao, Ming and Du, Zhonghao and Wang, Lei and Carlson, Eric and Guido, Louis and Wang, Han and Wang, Lai and Luo, Yi and Zhang, Yuhao}, }