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Title: Effect of Biased Field Rings to Improve Charge Removal after Heavy-Ion Strikes in Vertical Geometry β-Ga 2 O 3 Rectifiers
In this study, the response to a heavy-ion strike and the resulting single effect burnout on beta-Ga 2 O 3 Schottky diodes with biased field rings is investigated via TCAD. The model used to simulate the device under high-reverse bias is validated using experimental current-voltage (I-V) curves. A field ring configuration for the device demonstrates an improved charge removal after simulated heavy-ion strikes. If the time scale for charge removal is faster than single event burnout, this can be an effective mechanism for reducing the effect of single ion strikes. This study explores various configurations of the termination structure and shows the impact of different design parameters in terms of a transient response after the ion strike.  more » « less
Award ID(s):
1856662
NSF-PAR ID:
10400545
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
ECS Journal of Solid State Science and Technology
Volume:
12
Issue:
3
ISSN:
2162-8769
Page Range / eLocation ID:
035003
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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