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We present a review of the published experimental and simulation radiation damage results in Ga 2 O 3 . All of the polytypes of Ga 2 O 3 are expected to show similar radiation resistance as GaN and SiC, considering their average bond strengths. However, this is not enough to explain the orders of magnitude difference of the relative resistance to radiation damage of these materials compared to GaAs and dynamic annealing of defects is much more effective in Ga 2 O 3 . It is important to examine the effect of all types of radiation, given that Ga 2 O 3 devices will potentially be deployed both in space and terrestrial applications. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga 2 O 3 , which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials (Ga i ), vacancies (V Ga ), and antisites (Ga O ). One of the most important parameters to establish is the carrier removal rate for each type of radiation, since this directly impacts the current in devices such as transistors or rectifiers. When compared to the displacement damage predicted by the Stopping and Range of Ions in Matter(SRIM) code, the carrier removal rates are generally much lower and take into account the electrical nature of the defects created. With few experimental or simulation studies on single event effects (SEE) in Ga 2 O 3 , it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high Linear Energy Transfer (LET) and at much lower biases than expected. We have analyzed the transient response of β -Ga 2 O 3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage. Such biased rings help in the removal of the charge deposited by the ion strike.
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Effect of Biased Field Rings to Improve Charge Removal after Heavy-Ion Strikes in Vertical Geometry β-Ga 2 O 3 Rectifiers
In this study, the response to a heavy-ion strike and the resulting single effect burnout on beta-Ga 2 O 3 Schottky diodes with biased field rings is investigated via TCAD. The model used to simulate the device under high-reverse bias is validated using experimental current-voltage (I-V) curves. A field ring configuration for the device demonstrates an improved charge removal after simulated heavy-ion strikes. If the time scale for charge removal is faster than single event burnout, this can be an effective mechanism for reducing the effect of single ion strikes. This study explores various configurations of the termination structure and shows the impact of different design parameters in terms of a transient response after the ion strike.
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- Award ID(s):
- 1856662
- PAR ID:
- 10400545
- Date Published:
- Journal Name:
- ECS Journal of Solid State Science and Technology
- Volume:
- 12
- Issue:
- 3
- ISSN:
- 2162-8769
- Page Range / eLocation ID:
- 035003
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1149/2162-8777/acbcf1
